R1LP0408CSB-5SC#B0 Renesas Electronics America, R1LP0408CSB-5SC#B0 Datasheet - Page 8
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R1LP0408CSB-5SC#B0
Manufacturer Part Number
R1LP0408CSB-5SC#B0
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
Renesas Electronics America
Datasheet
1.R1LP0408CSP-5SCB0.pdf
(16 pages)
Specifications of R1LP0408CSB-5SC#B0
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 70°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R1LP0408CSB5SC#B0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
R1LP0408C-C Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Operating current
Average operating current
Standby current
Standby current
Output low voltage
Output high voltage
Notes: 1. Typical values are at V
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Input capacitance
Input/output capacitance
Note:
Rev.2.00, May.26.2004, page 6 of 12
2. Typical values are at V
1. This parameter is sampled and not 100% tested.
−5SC
−7LC
to +70°C
to +40°C
to +25°C
to +70°C
to +40°C
to +25°C
CC
CC
Cin
C
Symbol
= 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
= 5.0 V, Ta = +40°C and specified loading, and not guaranteed.
I/O
Symbol Min Typ
|I
|I
I
I
I
I
I
I
I
I
I
I
V
V
V
CC
CC1
CC2
SB
SB1
SB1
SB1
SB1
SB1
SB1
LI
LO
OL
OH
OH2
|
|
Min
2.4
2.6
Typ
1.5*
8*
2*
0.1*
1.0*
0.8*
1.0*
0.8*
1
1
Max
8
10
1
1
2
1
2
1
Max Unit Test conditions
1
1
3
25
5
0.5
8
3
3
16
10
10
0.4
Unit
pF
pF
µA
µA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
Test conditions
Vin = 0 V
V
Vin = V
CS# = V
WE# = V
CS# = V
Others = V
Min. cycle, duty = 100%,
CS# = V
I
Cycle time = 1 µs,
duty = 100%,
I
V
CS# = V
Vin ≥ 0 V, CS# ≥ V
I
I
I
I/O
I/O
OL
OH
OH
I/O
IH
= 0 mA
= 0 mA, CS# ≤ 0.2 V,
= 2.1 mA
= −1.0 mA
= −0.1 mA
≥ V
= 0 V
CC
SS
IH
IL
IL
IH
IL
,
, Others = V
− 0.2 V, V
to V
or OE# = V
or V
IH
/ V
CC
I/O
IL
, I
= V
I/O
CC
IL
= 0 mA
SS
− 0.2 V
≤ 0.2 V
IH
IH
/V
to V
Note
1
1
or
IL
CC