HYB25D256160CF-5 Qimonda, HYB25D256160CF-5 Datasheet - Page 20

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HYB25D256160CF-5

Manufacturer Part Number
HYB25D256160CF-5
Description
IC DDR SDRAM 256MBIT 60TFBGA
Manufacturer
Qimonda
Datasheet

Specifications of HYB25D256160CF-5

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1007-2
4
This chapter lists the electrical characteristics.
4.1
This chapter contains the operating conditions tables.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
Rev. 2.4, 2007-07
03062006-8CCM-VPUW
Parameter
Voltage on I/O pins relative to
Voltage on inputs relative to
Voltage on
Voltage on
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
V
V
DD
DDQ
supply relative to
supply relative to
Electrical Characteristics
Operating Conditions
V
SS
V
SS
V
V
SS
SS
Symbol
V
V
V
V
T
T
P
I
OUT
A
STG
IN
IN
DD
DDQ
D
,
V
OUT
20
Min. Typ.
–0.5
–1
–1
–1
0
–40
–25
–55
1
50
Values
Max.
V
+3.6
+3.6
+3.6
+70
+85
+85
+150
DDQ
HY[B/I]25D256[16/40/80]0C[E/C/F/T](L)
+ 0.5
256 Mbit Double-Data-Rate SDRAM
Absolute Maximum Ratings
Unit
V
V
V
V
°C
°C
°C
°C
W
mA
Note/ Test Condition
HYB
HYI
HYE
Internet Data Sheet
TABLE 16

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