N02L63W3AT25I ON Semiconductor, N02L63W3AT25I Datasheet - Page 5

• Manufacturer Part Number: N02L63W3AT25I
• Description: IC SRAM 2MBIT 70NS 44TSOP
• Manufacturer: ON Semiconductor
• Type: Asynchronousr

Specifications of N02L63W3AT25I

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Access Time: 30 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 2 mA
• Organization: 128 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 766-1035

N02L63W3A
Power Savings with Page Mode Operation (WE = V
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
CE
OE
Page Address (A4 - A16 )
Word Address (A0 - A3)
LB, UB
Rev. 15 | Page 5 of 11 | www.onsemi.com
Word 1
Word 2
Open page
IH
)
...
Word 16