CAT93C66XI ON Semiconductor, CAT93C66XI Datasheet - Page 3

• Manufacturer Part Number: CAT93C66XI
• Description: IC EEPROM 4KBIT 2MHZ 8SOIC
• Manufacturer: ON Semiconductor

Specifications of CAT93C66XI

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (512 x 8 or 256 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Density: 4Kb
• Interface Type: Serial (Microwire)
• Organization: 512x8/256x16
• Frequency (max): 500KHz
• Write Protection: Yes
• Data Retention: 100Year
• Operating Supply Voltage (typ): 3.3/5V
• Package Type: SOIC EIAJ
• Operating Temp Range: -40C to 85C
• Supply Current: 3mA
• Operating Supply Voltage (min): 2.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Block Mode, V
Table 1. PIN FUNCTION
Table 2. ABSOLUTE MAXIMUM RATINGS
Table 3. RELIABILITY CHARACTERISTICS
Table 4. D.C. OPERATING CHARACTERISTICS
(
V
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
N
Symbol
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
V
V
CC
V
V
END
I
I
V
V
I
I
V
V
CC1
CC2
I
SB1
SB2
OH1
OH2
I
OL1
OL2
Symbol
LO
IH1
IH2
LI
IL1
IL2
= +1.8 V to +5.5 V, T
T
(Note 3)
DR
Pin Name
Power Supply Current
(Write)
Power Supply Current
(Read)
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
DO
CS
SK
DI
CC
Endurance
Data Retention
Parameter
= 5 V, 25°C.
A
= −40°C to +125°C unless otherwise specified.)
Chip Select
Clock Input
Serial Data Input
Serial Data Output
f
f
V
CS = GND ORG = GND
V
ORG = Float or V
V
V
CS = GND
4.5 V ≤ V
4.5 V ≤ V
1.8 V ≤ V
1.8 V ≤ V
4.5 V ≤ V
4.5 V ≤ V
1.8 V ≤ V
1.8 V ≤ V
SK
SK
IN
IN
IN
OUT
Parameter
Parameters
= 1 MHz, V
= 1 MHz, V
= GND or V
= GND or V
= GND to V
Function
= GND to V
CC
CC
CC
CC
CC
CC
CC
CC
(Note 2)
< 5.5 V
< 5.5 V
< 4.5 V
< 4.5 V
< 5.5 V, I
< 5.5 V, I
< 4.5 V, I
< 4.5 V, I
CC
CC
CC
CC
CC
http://onsemi.com
CC
CC
= 5.0 V
= 5.0 V
,
, CS = GND
Test Conditions
,
OL
OH
OL
OH
= 2.1 mA
= 1 mA
= −400 mA
= −100 mA
3
CC
+ 1.5 V, for periods of less than 20 ns.
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
Pin Name
CC
ORG
GND
V
NC
+ 0.5 V. During transitions, the voltage on any pin may
CC
1,000,000
Min
100
V
V
CC
CC
Power Supply
Ground
Memory Organization
No Connection
−0.1
Min
2.4
2
0
x 0.7
− 0.2
Program / Erase Cycles
−65 to +150
−0.5 to +6.5
Ratings
Function
V
Units
Years
V
V
CC
CC
CC
Max
500
0.8
0.4
0.2
1
2
4
1
2
1
2
1
2
x 0.2
+ 1
+ 1
Units
Units
°C
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V