MCP73223T-C2SI/MF Microchip Technology, MCP73223T-C2SI/MF Datasheet - Page 6

• Manufacturer Part Number: MCP73223T-C2SI/MF
• Description: IC LI IRON PHOSPHATE CTRLR 10DFN
• Manufacturer: Microchip Technology

Specifications of MCP73223T-C2SI/MF

• Battery Type: Lithium Iron Phosphate (LiFePO4)
• Package / Case: 10-DFN
• Function: Charge Management
• Voltage - Supply: 4 V ~ 16 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Product: Charge Management
• Output Voltage: 7.2 V
• Output Current: 130 mA to 1100 mA
• Operating Supply Voltage: 4.2 V to 13 V
• Supply Current: 700 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Charge Safety Timers: No
• Mounting Style: SMD/SMT
• Temperature Monitoring: No
• Uvlo Start Threshold: 4.15 V
• Uvlo Stop Threshold: 4.05 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: MCP73X23EV-LFP - BOARD EVAL BATT CHARGER MCP73X23
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP73123/223
DC CHARACTERISTICS (CONTINUED)
DS22191C-page 6
Electrical Specifications: Unless otherwise indicated, all limits apply for V
T
Supply Ripple Attenuation
Battery Short Protection
BSP Start Threshold
BSP Start Threshold
BSP Hysteresis
BSP Regulation Current
Current Regulation (Fast Charge, Constant-Current Mode)
Fast Charge Current
Regulation
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
Charge Termination
Charge Termination
Current Ratio
Automatic Recharge
Recharge Voltage
Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Status Indicator - STAT
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
Charge Impedance Range
Shutdown Impedance
PROG Voltage Range
Automatic Power Down
Automatic Power Down
Entry Threshold
Automatic Power Down
Exit Threshold
Thermal Shutdown
Die Temperature
Die Temperature
Hysteresis
Note 1:
A
= -40°C to +85°C. Typical values are at +25°C, V
Parameters
Not production tested. Ensured by design.
I
V
I
PREG/
V
TERM
V
RTH
V
V
V
T
I
R
R
R
V
PDENTRY
PSRR
V
BSPHYS
SHORT
V
V
Sym
SHORT
SHORT
I
PDEXIT
SDHYS
I
V
PROG
PROG
PROG
T
PHYS
DSON
SINK
REG
I
PTH
PTH
LK
SD
/V
OL
/I
/I
REG
REG
REG
V
10 mV
Min
130
900
BAT
117
1.9
3.8
3.7
5.6
7.5
15
93
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0
DD
+
= [V
REG
150 mV
V
V
50 mV
0.001
1000
1.45
2.90
(Typical) + 1.0V]
Typ
150
130
100
100
350
200
BAT
BAT
150
-46
-30
2.0
4.0
7.5
0.2
25
10
10
20
95
20
10
—
—
—
5
0
+
+
DD
250 mV
V
= [V
1100
1100
Max
12.5
143
BAT
2.1
4.2
6.3
9.4
0.5
—
—
—
—
—
—
—
—
—
25
97
—
—
35
21
—
—
—
—
1
5
REG
+
(Typical) + 0.3V] to 12V,
Units
m
mV
mA
mA
mA
mA
mV
mA
dB
dB
A
k
k
C
C
%
%
%
%
V
V
V
V
V
V
V
V
I
I
MCP73123
MCP73223
T
PROG = 10 k
PROG = 1.1 k
PROG = 1 kto 10 k
T
No Preconditioning
MCP73123, V
MCP73223, V
V
PROG = 1 kto 10 k
T
V
No Automatic Recharge
V
I
High Impedance, V
Impedance for Shutdown
V
V
 2011 Microchip Technology Inc.
OUT
OUT
SINK
A
A
A
BAT
BAT
DD
DD
DD
=-5°C to +55°C
=-5°C to +55°C
=-5°C to +55°C
= 4.5V, T
Falling
Rising
= 20 mA, 10 Hz to 1 kHz
= 20 mA, 10 Hz to 10 kHz
High-to-Low
High-to-Low
= 4 mA
Conditions
J
BAT
BAT
= 105°C
Low-to-High
Low-to-High
(Note
DD
on pin
(Note
1)
1)