LT4250HCS8#TR Linear Technology, LT4250HCS8#TR Datasheet - Page 3
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LT4250HCS8#TR
Manufacturer Part Number
LT4250HCS8#TR
Description
IC CONTRLR HOTSWAP NEG 48V 8SOIC
Manufacturer
Linear Technology
Type
Hot-Swap Controllerr
Datasheet
1.LT4250HCS8PBF.pdf
(14 pages)
Specifications of LT4250HCS8#TR
Applications
General Purpose
Internal Switch(s)
No
Voltage - Supply
-20 V ~ -80 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
LT4250HCS8TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ELECTRICAL CHARACTERISTICS
SYMBOL
DC
V
I
V
V
I
I
I
ΔV
V
V
V
I
V
V
V
I
V
V
I
V
I
AC
t
t
t
t
t
t
t
t
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
temperature range, otherwise specifi cations are at T
DD
PU
PD
SENSE
INUV
INOV
DRAIN
OH
PHLOV
PHLUV
PLHOV
PLHUV
PHLSENSE
PHLCB
PHLDL
PHLGH
DD
UVL
CL
UVH
UVL
UVHY
OVH
OVL
OVHY
DL
GH
OL
GATE
PARAMETER
Supply Voltage Operating Range
Supply Current
Undervoltage Lockout
Current Limit Trip Voltage
GATE Pin Pull-Up Current
GATE Pin Pull-Down Current
SENSE Pin Current
External Gate Drive
UV Pin High Threshold Voltage
UV Pin Low Threshold Voltage
UV Pin Hysteresis
UV Pin Input Current
OV Pin High Threshold Voltage
OV Pin Low Threshold Voltage
OV Pin Hysteresis
OV Pin Input Current
DRAIN Low Threshold
GATE High Threshold
Drain Input Bias Current
PWRGD Output Low Voltage
PWRGD Output Low Voltage
(PWRGD – DRAIN)
Output Leakage
OV High to GATE Low
UV Low to GATE Low
OV Low to GATE High
UV High to GATE High
SENSE High to Gate Low
Current Limit to GATE Low
DRAIN Low to PWRGD Low
DRAIN Low to (PWRGD – DRAIN) High
GATE High to PWRGD Low
GATE High to (PWRGD – DRAIN) High
CONDITIONS
UV = 3V, OV = V
V
Gate Drive On, V
Gate Drive OFF
V
(V
UV Increasing
UV Decreasing
V
OV Increasing
OV Decreasing
V
V
ΔV
V
PWRGD (LT4250L), (V
I
I
PWRGD (LT4250H), V
I
PWRGD (LT4250L), V
PWRGD (LT4250H), V
Figures 1a, 2
Figures 1a, 3
Figures 1a, 2
Figures 1a, 3
Figures 1a, 4a
Figures 1b, 4b
(LT4250L) Figures 1a, 5a
(LT4250H) Figures 1a, 5a
(LT4250L) Figures 1a, 5b
(LT4250H) Figures 1a, 5b
OUT
OUT
OUT
CL
SENSE
UV
OV
DRAIN
DRAIN
GATE
GATE
= (V
= V
= V
= 1mA
= 5mA
= 1mA
– V
– V
= 48V
A
= 50mV
EE
EE
– V
SENSE
= 25°C. (Note 2), V
EE
EE
GATE
), 18V ≤ V
, DRAIN Decreasing
– V
The
EE
Decreasing
GATE
, SENSE = V
EE
l
)
= V
DRAIN
DRAIN
DRAIN
denotes the specifi cations which apply over the full operating
DRAIN
DD
EE
≤ 80V
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to V
specifi ed.
= 48V, V
= 5V
= 0V, V
– V
EE
DD
EE
) < V
= 48V, V
PWRGD
PWRGD
DL
= 80V
= 80V
EE
= 0V unless otherwise noted.
LT4250L/LT4250H
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
1.105
1.235
MIN
1.24
1.21
–30
1.1
18
40
24
10
10
1.255
1.125
–0.02
1.255
1.235
–0.03
15.4
13.5
0.48
0.75
0.05
0.05
TYP
–45
–20
130
500
1.6
1.6
1.3
1.2
1.7
1.5
5.5
6.5
1.5
1.5
50
50
20
80
1
1
1
EE
unless otherwise
1.145
1.275
1.255
MAX
1.27
–0.5
–0.5
–60
500
2.3
0.8
80
60
70
18
10
10
5
3
1
3
4250lhfa
UNITS
3
mA
mV
mA
mV
mV
μA
μA
μA
μA
μA
μA
μA
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
V
V
V
V
V
V
V
V
V
V
V
V