LTC4219IDHC-5#TRPBF Linear Technology, LTC4219IDHC-5#TRPBF Datasheet - Page 12

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LTC4219IDHC-5#TRPBF

Manufacturer Part Number
LTC4219IDHC-5#TRPBF
Description
IC CONTROLLER HOT SWAP 5A 16DFN
Manufacturer
Linear Technology
Type
Hot-Swap Switchr
Datasheet

Specifications of LTC4219IDHC-5#TRPBF

Applications
General Purpose
Internal Switch(s)
Yes
Current Limit
5.6A
Voltage - Supply
2.9 V ~ 15 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-WFDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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APPLICATIONS INFORMATION
LTC4219
Adding a capacitor and a 1k series resistor from GATE
to ground will lower the inrush current below the default
value set by the inrush circuit. The GATE is then charged
with a 24μA current source. The voltage at the GATE pin
rises with a slope equal to 24μA/C
inrush current is set at:
When the GATE voltage reaches the MOSFET threshold
voltage, the switch begins to turn on and the OUT voltage
follows the GATE voltage as it increases. Once OUT reaches
V
Zener between GATE and OUT.
As the OUT voltage rises, so will the FB pin which is moni-
toring it. Once the FB pin crosses its 1.235V threshold and
the GATE to OUT voltage exceeds 4.2V, the PG pin pulls
low indicating that the power is good.
Parasitic MOSFET Oscillation
When the N-channel MOSFET ramps up the output dur-
ing power-up it operates as a source follower. The source
follower confi guration may self-oscillate in the range of
25kHz to 300kHz when the load capacitance is less than
10μF, especially if the wiring inductance from the supply
to the V
lation will increase as the load current (during power-up)
increases. There are two ways to prevent this type of
oscillation. The simplest way is to avoid load capacitances
below 10μF. For wiring inductance larger than 20μH, the
minimum load capacitance may extend to 100μF. A second
choice is to connect an external gate capacitor C
as shown in Figure 3.
12
DD
I
INRUSH
, the GATE will ramp up until clamped by the 6.15V
DD
pin is greater than 3μH. The possibility of oscil-
=
Figure 3. Compensation for Small C
C
LTC4219
GATE
C
L
• 24µA
GATE
C
2.2nF
P
GATE
* OPTIONAL
4219 F03
RC TO LOWER
INRUSH CURRENT
and the supply
LOAD
P
>1.5nF
Turn-Off Sequence
The switch can be turned off by a variety of conditions. A
normal turn-off is initiated by either the EN1 or EN2 pins
going above their 1.235V threshold. Additionally, several
fault conditions will turn off the switch. These include
overcurrent circuit breaker (SENSE pin) or overtem-
perature. Normally the switch is turned off with a 250μA
current pulling down the GATE pin to ground. With the
switch turned off, the OUT voltage drops which pulls the
FB pin below its threshold. PG then goes high to indicate
output power is no longer good.
If V
drops below 2.5V for greater than 1μs, a fast shutdown
of the switch is initiated. The GATE is pulled down with a
140mA current to the OUT pin.
Overcurrent Fault
The LTC4219 features an adjustable current limit with
foldback that protects against short circuits or excessive
load current. To prevent excessive power dissipation in the
switch during active current limit, the available current is
reduced as a function of the output voltage sensed by the
FB pin. A graph in the Typical Performance Characteristics
curves shows the current limit versus FB voltage.
An overcurrent fault occurs when the current limit circuitry
has been engaged for longer than the time-out delay set
by the TIMER. Current limiting begins when the MOSFET
current reaches 1.5A to 5.6A (depending on the foldback).
The GATE pin is then brought down with a 140mA GATE-
to-OUT current. The voltage on the GATE is regulated in
order to limit the current to less than 5.6A. At this point,
a circuit breaker time delay starts by charging the external
timing capacitor from the TIMER pin with a 100μA pull-
up current. If the TIMER pin reaches its 1.2V threshold,
the internal switch turns off (with a 250μA current from
GATE to ground). Included in the Typical Performance
Characteristics curves is a graph of the Safe Operating
Area for the MOSFET. From this graph one can determine
the MOSFET’s maximum time in current limit for a given
output power.
DD
drops below 2.65V for greater than 5μs or INTV
4219fb
CC

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