MC34652EF Freescale Semiconductor, MC34652EF Datasheet - Page 17

• Manufacturer Part Number: MC34652EF
• Description: IC CTRLR HOT SWAP NEG V 16-SOIC
• Manufacturer: Freescale Semiconductor
• Type: Hot-Swap Switchr

Specifications of MC34652EF

• Applications: General Purpose
• Internal Switch(s): Yes
• Current Limit: 2.0A
• Voltage - Supply: 15 V ~ 80 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

follows:
junction temperature is 106.2°C, which is well below the
thermal shutdown temperature that is allowed.
when the device is in normal operation. During the charging
process, the power is dominated by the I * V across the Power
MOSFET. When charging starts, the power in the Power
MOSFET rises up and reaches a maximum value of I * V, then
quickly ramps back down to the steady state level in a period
governed by the size of the load’s input capacitor that is being
charged and by the value of the charging current limit I
In this case the instantaneous power dissipation is much
higher than the steady state case, but it is on for a very short
time.
For example:
Then:
Table 5. Thermal Resistance Data
Combining the two equations:
Analog Integrated Circuit Device Data
Freescale Semiconductor
Junction to Package
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
The power dissipation in the device can be calculated as
T
R
R
I
I
So if the overcurrent limit is 2.0 A, then the maximum
The previous explanation applies to steady state power
Junction to Board
I
2
2
Junction to Case
Junction to Lead
2
A
θJA
DS(ON)
(LOAD)
(LOAD)
(LOAD)
(max) = 55°C
= 51°C/W for a four-layer board
Type
Top
= [ T
= [ T
= 0.251 Ω at high temperatures
= [ T
P = [T
J
J
J
(max) - 55°C] / [51°C/W
(max) - 55°C] / 12.80°C / A
(max) - T
P = I
J
(max) - T
Single-layer board (1s), per JEDEC JESD51-2 with board (JESD51-3) horizontal
Four-layer board (2s2p), per JEDEC JESD51-2 with board (JESD51-3) horizontal
Single-layer board with a 300 mm
Single-layer board with a 600 mm
Four-layer board with a via for each thermal lead, not standard JEDEC
Four-layer board with a 300 mm
between radiator pad and top surface, not standard JEDEC
Four-layer board with a 600 mm
between radiator pad and top surface, not standard JEDEC
Thermal resistance between die and board per JEDEC JESD51-8
Thermal resistance between die and case top
Temperature difference between package top and junction per JEDEC JESD51-2
Thermal resistance between junction and thermal lead, not standard JEDEC
2
(LOAD)
A
(max)] / [R
OR
A
*
(max)] / R
R
DS(ON)
θJA
*
*
θJA
0.251 Ω]
2
R
DS(ON)
] Eq 1
2
2
2
2
radiator pad on its top surface and a full array of vias
radiator pad on its top surface and a full array of vias
radiator pad on its top surface, not standard JEDEC
radiator pad on its top surface, not standard JEDEC
CHG
Condition
.
For example:
Then:
under the instantaneous power pulse during the charging
process.
different board configurations.
Figure 17. Instantaneous Temperature Rise of an 8.0 W
I
C
V
The power pulse magnitude = I
The power pulse duration = C
Figure 17
CHG
LOAD
PWR
60.0
50.0
40.0
30.0
20.0
10.0
0.0
= 100 mA, the default value
= 80 V, worst case
Table 5
0
= 400 μF, a very large capacitor
displays the temperature profile of the device
depicts thermal resistance values for
100
FUNCTIONAL DEVICE OPERATION
Tim e (m illisec)
Time (ms)
LOAD
200
CHG
Symbol
PROTECTION FEATURES
R
R
R
R
R
Ψ
θ
—
—
—
—
—
*
θ
θ
θ
θ
JMA
*
JT
JA
JB
JC
JL
V
V
PWR
PWR
Value
/ I
300
103
= 8.0 W
65
69
65
51
47
47
29
33
12
33
CHG
= 320 ms
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
34652
17
400