LM5110-1SD/NOPB National Semiconductor, LM5110-1SD/NOPB Datasheet - Page 5

• Manufacturer Part Number: LM5110-1SD/NOPB
• Description: IC DRIVER DUAL 5A NEG VOUT 10LLP
• Manufacturer: National Semiconductor

Specifications of LM5110-1SD/NOPB

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 25ns
• Current - Peak: 5A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 3.5 V ~ 14 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-LLP
• Number Of Drivers: 2
• Driver Configuration: Non-Inverting
• Driver Type: Low Side
• Input Logic Level: TTL
• Rise Time: 25ns
• Fall Time: 25ns
• Propagation Delay Time: 40ns
• Operating Supply Voltage (max): 14V
• Peak Output Current: 5mA
• Output Resistance: 1.4/30Ohm
• Operating Supply Voltage (min): 3.5V
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 10
• Package Type: LLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Compliant
• Other names: LM5110-1SD; LM5110-1SDTR

V
V
I
I
CONTROL INPUTS
V
V
HYS
I
I
SHUTDOWN INPUT
ISD
VSDR
VSDH
OUTPUT DRIVERS
R
R
I
I
CC
CCSD
IL
IH
Source
Sink
CCR
CCH
IH
IL
OH
OL
Absolute Maximum Ratings
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please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
T
specified.
Symbol
V
V
IN to IN_REF, nSHDN to IN_REF
J
CC
CC
= −40˚C to +125˚C, V
to V
to IN_REF
EE
V
V
(rising)
V
Hysteresis
V
V
Logic High
Logic Low
Input Hysteresis
Input Current Low
Input Current High
Pull-up Current
Shutdown Threshold
Shutdown Hysteresis
Output Resistance High
Output Resistance Low
Peak Source Current
Peak Sink Current
CC
CC
CC
CC
CC
Operating Range
Supply Current (I
Shutdown Current (I
Under Voltage Lockout
Under Voltage Lockout
Parameter
CC
= 12V, V
CC
)
EE
CC
)
= IN_REF = 0V, nSHDN = V
−0.3V to 15V
−0.3V to 15V
−0.3V to 15V
V
V
IN_A = IN_B = 0V (5110-1)
IN_A = IN_B = V
(5110-2)
IN_A = V
(5110-3)
nSHDN = 0V
IN_A=IN_B=V
(5110-1-2-3)
IN_A=IN_B=V
IN_A=IN_B=V
IN_A=V
IN_B=V
nSHDN = 0 V
nSHDN rising
I
I
OUTA/OUTB = V
200 ns Pulsed Current
OUTA/OUTB = V
200 ns Pulsed Current
OUT
OUT
CC
CC
(Note 1)
−IN_REF and V
−IN_REF
= −10 mA
= + 10 mA
CC
CC
Conditions
CC
(5110-3)
(5110-3)
, IN_B = 0V
CC
CC
CC
5
CC
(5110-1)
(5110-2)
CC
CC
/2,
/2,
CC
IN_REF to V
Storage Temperature Range, (T
Maximum Junction Temperature,
Operating Junction Temperature
ESD Rating
−V
CC
(T
, No Load on OUT_A or OUT_B, unless otherwise
EE
J
(max))
Min
3.5
2.3
0.8
0.8
−1
10
−1
10
-1
EE
1.75
1.35
Typ
230
400
−18
165
2.9
0.1
0.1
0.1
1.5
1.4
18
18
18
30
1
1
1
3
5
STG
)
Max
−25
3.5
2.2
2.2
2.5
14
25
25
25
50
2
2
2
1
1
1
−55˚C to +150˚C
−0.3V to 5V
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Units
+150˚C
+125˚C
mV
mA
mV
mV
µA
µA
µA
Ω
Ω
V
V
V
V
V
A
A
2kV