MC34151PG ON Semiconductor, MC34151PG Datasheet - Page 5
![IC MOSFET DRIVER DUAL HS 8DIP](/photos/6/58/65804/8-dip_626-05_sml.jpg)
MC34151PG
Manufacturer Part Number
MC34151PG
Description
IC MOSFET DRIVER DUAL HS 8DIP
Manufacturer
ON Semiconductor
Type
High Speedr
Datasheet
1.MC33151PG.pdf
(12 pages)
Specifications of MC34151PG
Configuration
Low-Side
Input Type
Inverting
Delay Time
35ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
6.5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Rise Time
31 ns
Fall Time
32 ns
Supply Voltage (min)
6.5 V
Supply Current
10.5 mA
Maximum Power Dissipation
1000 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Minimum Operating Temperature
0 C
Number Of Drivers
2
Driver Configuration
Inverting
Driver Type
High Speed
Input Logic Level
CMOS/LSTTL
Propagation Delay Time
100ns
Operating Supply Voltage (max)
18V
Peak Output Current
1.5A
Power Dissipation
1W
Operating Supply Voltage (min)
6.5V
Operating Supply Voltage (typ)
12V
Turn Off Delay Time
100fs
Turn On Delay Time (max)
100ps
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
8
Package Type
PDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MC34151PGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC34151PG
Manufacturer:
ON Semiconductor
Quantity:
1
Part Number:
MC34151PG
Manufacturer:
ON/安森美
Quantity:
20 000
90%
10%
90%
10%
-1.0
-2.0
-3.0
3.0
2.0
1.0
0
0
0
Figure 10. Drive Output Saturation Voltage
0.2
Figure 12. Drive Output Rise Time
Figure 8. Propagation Delay
I
0.4
O
, OUTPUT LOAD CURRENT (A)
versus Load Current
V
CC
Logic Input
Sink Saturation
10 ns/DIV
50 ns/DIV
(Load to V
Drive Output
0.6
Source Saturation
(Load to Ground)
CC
0.8
)
V
V
C
T
A
CC
in
L
= 25°C
GND
= 1.0 nF
= 5 V to 0 V
1.0
= 12 V
V
V
C
T
V
80 ms Pulsed Load
120 Hz Rate
T
A
in
A
CC
L
CC
= 1.0 nF
= 25°C
= 25°C
= 5 V to 0 V
= 12 V
= 12 V
1.2
http://onsemi.com
1.4
5
90%
10%
-0.5
-0.7
-0.9
-1.1
-1.0
1.9
1.7
1.5
1.0
0.8
0.6
3.0
2.0
1.0
0
0
0
0
-55
0
(Drive Output Driven Above V
Source Saturation
(Load to Ground)
Figure 11. Drive Output Saturation Voltage
Sink Saturation
(Load to V
Figure 9. Drive Output Clamp Voltage
0.2
High State Clamp
-25
Figure 13. Drive Output Fall Time
CC
T
)
I
A
O
0.4
versus Clamp Current
, AMBIENT TEMPERATURE (°C)
, OUTPUT LOAD CURRENT (A)
versus Temperature
V
GND
0
CC
V
CC
I
sink
I
sink
GND
0.6
10 ns/DIV
25
CC
= 400 mA
= 10 mA
)
(Drive Output Driven Below Ground)
I
I
source
source
0.8
50
= 400 mA
= 10 mA
Low State Clamp
V
V
C
T
A
CC
in
L
= 1.0 nF
= 25°C
= 5 V to 0 V
1.0
= 12 V
V
80 ms Pulsed Load
120 Hz Rate
T
75
A
CC
= 25°C
= 12 V
V
CC
1.2
100
= 12 V
125
1.4