LM5111-1MYX/NOPB National Semiconductor, LM5111-1MYX/NOPB Datasheet - Page 3
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LM5111-1MYX/NOPB
Manufacturer Part Number
LM5111-1MYX/NOPB
Description
IC MOSFET DRIVER DUAL 5A 8-MSOP
Manufacturer
National Semiconductor
Datasheet
1.LM5111-1MYNOPB.pdf
(12 pages)
Specifications of LM5111-1MYX/NOPB
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
25ns
Current - Peak
5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
3.5 V ~ 14 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-MSOP Exposed Pad, 8-HMSOP, 8-eMSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Other names
LM5111-1MYX
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LM5111-1MYX/NOPB
Manufacturer:
NS/TI
Quantity:
20
V
V
I
CONTROL INPUTS
V
V
V
V
HYS
I
I
OUTPUT DRIVERS
R
R
I
I
CC
IL
IH
Source
Sink
CCR
CCH
IH
IL
thH
thL
OH
OL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
T
V
IN to V
Symbol
J
CC
= −40°C to +125°C, V
to V
EE
EE
V
V
(rising)
V
Hysteresis
V
Logic High
Logic Low
High Threshold
Low Threshold
Input Hysteresis
Input Current Low
Input Current High
Output Resistance High
Output Resistance Low
Peak Source Current
Peak Sink Current
CC
CC
CC
CC
Operating Range
Supply Current (I
Under Voltage Lockout
Under Voltage Lockout
Parameter
CC
= 12V, V
CC
)
EE
= 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
−0.3V to 15V
−0.3V to 15V
V
V
IN_A = IN_B = 0V (5111-1)
IN_A = IN_B = V
IN_A = V
IN_A=IN_B=V
IN_B=V
IN_A=IN_B=V
IN_A=IN_B=V
IN_A=V
I
I
OUTA/OUTB = V
200 ns Pulsed Current
OUTA/OUTB = V
200 ns Pulsed Current
OUT
OUT
(Note 1)
CC
CC
−V
−V
= −10 mA (Note 2)
= + 10 mA (Note 2)
EE
EE
CC
CC
CC
(5111-3)
(5111-3)
, IN_B = 0V (5111-3)
Conditions
CC
CC
CC
CC
3
(5111-1-2-3)
(5111-2)
(5111-1)
CC
CC
(5111-2)
/2,
/2,
Storage Temperature Range, (T
Maximum Junction Temperature,
Operating Junction Temperature
ESD Rating
(T
J
(max))
Min
3.5
2.3
2.2
1.3
0.8
−1
10
−1
10
-1
1.75
1.35
Typ
230
400
2.9
0.1
0.1
0.1
1.4
18
18
30
1
1
1
3
5
STG
)
−55°C to +150°C
Max
3.5
0.8
2.2
2.0
2.5
14
25
25
50
2
2
2
1
1
1
www.national.com
+150°C
+125°C
Units
mV
mA
mV
2kV
µA
Ω
Ω
V
V
V
V
V
V
A
A