MC33151DG ON Semiconductor, MC33151DG Datasheet - Page 9

• Manufacturer Part Number: MC33151DG
• Description: IC MOSFET DRIVER DUAL HS 8-SOIC
• Manufacturer: ON Semiconductor
• Type: High Speedr

Specifications of MC33151DG

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 35ns
• Current - Peak: 1.5A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 31 ns
• Fall Time: 32 ns
• Supply Voltage (min): 6.5 V
• Supply Current: 10.5 mA
• Maximum Power Dissipation: 560 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Dc: 0818
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET's turn-on and
turn-off times.
Figure 23. Controlled MOSFET Drive
The capacitor's equivalent series resistance limits the Drive Output Current
to 1.5 A. An additional series resistor may be required when using tantalum or
other low ESR capacitors.
330pF
+
10k
4
2
R
g(off)
R
+
+
g(on)
V
4.7 0.1
+
CC
+
+
V
= 15 V
Figure 25. Dual Charge Pump Converter
in
6
5.7V
+
-
http://onsemi.com
3
9
+
+
The totem-pole outputs can furnish negative base current for enhanced
transistor turn-off, with the addition of capacitor C
7
5
Figure 24. Bipolar Transistor Drive
6.8
6.8 10
+
10
+
+
0
-
I
B
+
1N5819
I
O
1N5819
1.0
(mA)
10
20
30
50
Output Load Regulation
0
47
47
Base Charge
+
+
Removal
+V
27.7
27.4
26.4
25.5
24.6
22.6
O
- V
+ V
(V)
C
O
O
1
≈ - V
≈ 2.0 V
1
.
CC
−V
V
−13.3
−12.9
−11.9
−11.2
−10.5
−9.4
CC
in
O
(V)