NUD3112DMT1G ON Semiconductor, NUD3112DMT1G Datasheet

MOSFT N-CH DUAL 14V 500MA SC74-6

NUD3112DMT1G

Manufacturer Part Number
NUD3112DMT1G
Description
MOSFT N-CH DUAL 14V 500MA SC74-6
Manufacturer
ON Semiconductor
Type
Low Sider
Datasheet

Specifications of NUD3112DMT1G

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
1.2 Ohm
Current - Output / Channel
400mA
Current - Peak Output
500mA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 5 V
Drain-source Breakdown Voltage
14 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.5 A
Power Dissipation
380 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Supply Voltage Max
14V
No. Of Outputs
2
Output Voltage
14V
Output Current
400mA
Driver Case Style
SC-74
Device Type
Relay
Termination Type
SMD
No. Of Pins
6
Rohs Compliant
Yes
Filter Terminals
SMD
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NUD3112DMT1GOS
NUD3112DMT1GOS
NUD3112DMT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NUD3112DMT1G
Manufacturer:
ON
Quantity:
6 000
Part Number:
NUD3112DMT1G
Quantity:
2 000
Part Number:
NUD3112DMT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NUD3112DMT1G
0
NUD3112
Integrated Relay,
Inductive Load Driver
solenoids incandescent lamps, and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
Gate (1)
This device is used to switch inductive loads such as relays,
Sensitive Logic Circuits
Systems Operation
Recorders
Equipment, Garage Door Openers
Provides a Robust Driver Interface Between D.C. Relay Coil and
Optimized to Switch Relays of 12 V Rail
Capable of Driving Relay Coils Rated up to 6.0 W at 12 V
Internal Zener Eliminates the Need of Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Low V
Pb−Free Packages are Available
Telecom: Line Cards, Modems, Answering Machines, FAX
Computers and Office: Photocopiers, Printers, Desktop Computers
Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Industrial: Small Appliances, Security Systems, Automated Test
DS(ON)
Reduces System Current Drain
300 k
CASE 318
1.0 k
Source (2)
Drain (3)
INTERNAL CIRCUIT DIAGRAMS
Gate (2)
1
300 k
1.0 k
Source (1)
Drain (6)
NUD3112DMT1G
†For information on tape and reel specifications,
NUD3112LT1
NUD3112LT1G
NUD3112DMT1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
6
CASE 318F
Device
2
1
3
JW5 = Specific Device Code
M
G
(Note: Microdot may be in either location)
JW5 = Specific Device Code
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
Source (4)
Drain (3)
http://onsemi.com
CASE 318F
CASE 318
= Date Code
= Pb−Free Package
STYLE 21
STYLE 7
= Date Code
= Pb−Free Package
SOT−23
SC−74
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SC−74
SC−74
MARKING DIAGRAMS
1.0 k
Publication Order Number:
300 k
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
JW5 MG
JW5 MG
Shipping
G
G
NUD3112/D
Gate (5)

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NUD3112DMT1G Summary of contents

Page 1

... Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev Device NUD3112LT1 NUD3112LT1G NUD3112DMT1 NUD3112DMT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (6) Gate (2) 1.0 k 300 k ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise specified) J Symbol V Drain to Source Voltage – Continuous DSS V Gate to Source Voltage – Continuous GS I Drain Current – Continuous D E Single Pulse Drain−to−Source Avalanche Energy ( z ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS Symbol DYNAMIC CHARACTERISTICS C Input Capacitance iss ( kHz Output Capacitance oss ( kHz) ...

Page 4

TYPICAL PERFORMANCE CURVES 5 3 0.1 0.01 0.001 0.0001 0.00001 0.0 0.1 0.2 0.3 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 2. Output Characteristics 1200 I = 0.5 A 1000 ...

Page 5

TYPICAL PERFORMANCE CURVES 1 3 1.1 125°C 1 0.9 85°C 0.8 25°C 0.7 0.6 −40°C 0.5 0.4 0.05 0.10 0.15 0.20 0.25 0.30 0. DRAIN CURRENT (A) D Figure 8. On−Resistance vs. Drain Current ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS ...

Page 7

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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