VN750S-E STMicroelectronics, VN750S-E Datasheet - Page 19

• Manufacturer Part Number: VN750S-E
• Description: IC DRIVER HIGH SIDE 8-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN750S-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage (min): 5.5 V
• Supply Current: 3.5 mA
• Maximum Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 30000 ns
• Maximum Turn-on Delay Time: 40000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 6A
• Output Resistance: 0.06ohm
• Input Delay: 40µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Driver Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 35. SO-8 Thermal Impedance Junction Ambient Single Pulse
Figure 36. Thermal fitting model of a single
channel HSD in SO-8
1000
Tj
0.01
Pd
100
0.1
10
0.0001
C1
R1
ZTH (°C/W)
1
C2
R2
0.001
C3
R3
T_amb
C4
R4
0.01
C5
R5
0.1
C6
R6
Time (s)
VN750-E / VN750S-E / VN750PT-E / VN750B5-E
Pulse calculation formula
Table 14. Thermal Parameter
1
where
R1 (°C/W)
R2 (°C/W)
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
TH
Area/island (cm
=
R
10
TH
=
t
p
+
T
Z
2
)
100
THtp
1 –
2.60E-03
0.0075
0.006
0.045
0.05
0.35
1.05
1000
0.5
0.8
3.5
21
16
58
0.5 cm
2 cm
28
2
2
19/31
2
2