VN750SM-E STMicroelectronics, VN750SM-E Datasheet
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VN750SM-E
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VN750SM-E Summary of contents
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... VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (*) IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VN750SM monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V pin voltage clamp protects the device ...
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... VN750SM-E Figure 2. Block Diagram V CC CLAMP GND INPUT STATUS OVERTEMPERATURE DETECTION Table 3. Absolute Maximum Ratings Symbol V DC Supply Voltage Reverse DC Supply Voltage Reverse Ground Pin Current gnd I DC Output Current OUT - I Reverse DC Output Current OUT I DC Input Current Status Current STAT Electrostatic Discharge (Human Body Model: R=1 ...
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... V CC OUTPUT OUTPUT N.C. Output INPUT STATUS OUTPUT GND I GND Parameter (at least 35 m thick) connected to all (at least 35 m thick) connected to all V VN750SM-E N.C. STATUS INPUT GND Input X Through 10K resistor OUT OUT Value Max Max 82( ) pins. Horizontal CC pins ...
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... VN750SM-E ELECTRICAL CHARACTERISTICS (8V<V Table 5. Power Symbol Parameter V Operating Supply Voltage CC V Undervoltage Shut-down USD Undervoltage Shut-down V USDhyst Hysteresis V Overvoltage Shut-down State Resistance ON I Supply Current S I Off State Output Current L(off1) I Off State Output Current L(off2) I Off State Output Current ...
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... STAT I =1mA STAT I =-1mA STAT Test Conditions T >T j TSD 5.5V<V <36V CC I =2A; V =0V; L=6mH OUT IN Test Conditions V = =0A OUT V =0V IN VN750SM-E Min. Typ. Max. Unit 0.6 V Min Typ Max Unit 0 100 -0.7 V Min Typ Max Unit 150 175 200 °C 135 ° ...
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... VN750SM-E Figure 5. OPEN LOAD STATUS TIMING (with external pull-up) V OUT STAT t DOL(off) Table 12. Truth Table CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > Output Current < Figure 6. Switching time Waveforms V OUTn dV /dt OUT (on) V INn t d(on) 6/20 I < I > V OUT ...
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... Pin CC TEST LEVELS II III -50 V -75 V +50 V +75 V -50 V -100 V + +46.5 V +66.5 V TEST LEVELS RESULTS CONTENTS VN750SM-E Delays and IV Impedance -100 +100 V 0 -150 V 0 +100 V 0 100 ms, 0.01 +86.5 V 400 ms, 2 III ...
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... VN750SM-E Figure 7. Waveforms INPUT LOAD VOLTAGE STATUS V CC INPUT LOAD VOLTAGE STATUS V CC INPUT LOAD VOLTAGE STATUS INPUT LOAD VOLTAGE STATUS INPUT LOAD VOLTAGE STATUS T j INPUT LOAD CURRENT STATUS 8/20 NORMAL OPERATION UNDERVOLTAGE V USDhyst V USD undefined OVERVOLTAGE V <V V > OPEN LOAD with external pull-up V > ...
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... HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -V CCpeak . GND Calculation example: For V CCpeak 5k R Recommended R VN750SM OUTPUT D GND max DC rating. CC line that are greater than the ones CC line, the control pins will CC C and the current required by the ...
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... VN750SM-E OPEN LOAD DETECTION IN OFF STATE Off state open load detection requires an external pull-up resistor (R ) connected between OUTPUT pin and a PU positive supply voltage (V ) like the +5V line used to PU supply the microprocessor. The external resistor has to be selected according to the following requirements: ...
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... Figure 15. Status Clamp Voltage Vscl (V) 8 7.8 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 100 125 150 175 VN750SM-E Vin=3.25V - 100 125 Tc (ºC) Vstat=5V -50 - 100 125 Tc (°C) Istat=1mA - 100 125 Tc (°C) ...
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... VN750SM-E Figure 16. On State Resistance Vs T Ron (mOhm) 140 120 Iout=2A Vcc=8V; 13V; 36V 100 -50 - (ºC) Figure 18. Openload On State Detection Threshold Iol (A) 1.2 1.15 Vcc=13V 1.1 Vin=5V 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 -50 - (ºC) Figure 19. Input High Level Vih (V) 3 ...
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... Figure 26. I Ilim ( 100 125 150 175 -50 100 125 150 175 VN750SM-E Vcc=13V Rl=6.5Ohm -50 - 100 125 Tc (º LIM case Vcc=13V - 100 125 Tc (ºC) 150 175 150 175 13/20 ...
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... VN750SM-E Figure 27. SO-8 Maximum turn off current versus load inductance I LMAX (A) 100 Single Pulse at T =150ºC Jstart B= Repetitive pulse at T =100ºC Jstart C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 14/ L(mH) Values are generated with R In case of repetitive pulses, T ...
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... Cu thickness=35 m, Copper areas: 0.14cm Figure 29 PCB copper area in open box free air condition thj-amb RTHj_amb (ºC/W) 110 105 100 measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm 2cm ). SO8 at 2 pins connected to TAB 0.5 1 1.5 PCB Cu heatsink area (cm^2) VN750SM-E 2 2.5 15/20 ...
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... VN750SM-E Figure 30. SO-8 Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 10 1 0.1 0.01 0.0001 0.001 Figure 31. Thermal fitting model of a single channel HSD in SO T_amb 16/20 0.01 0.1 1 Time (s) Pulse calculation formula Z TH where Table 14. Thermal Parameter Area/island (cm R1 (° ...
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... PACKAGE MECHANICAL Table 15. SO-8 Mechanical Data Symbol Figure 32. SO-8 Package Dimensions millimeters Min Typ 0.1 0.65 0.35 0.19 0.25 45 (typ.) 4.8 5.8 1.27 3.81 3.8 0.4 8 (max.) 0.8 VN750SM-E Max 1.75 0.25 1.65 0.85 0.48 0.25 0.5 5 6.2 4 1.27 0.6 1.2 17/20 ...
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... VN750SM-E Figure 33. SO-8 TUBE SHIPMENT (no suffix) B Figure 34. SO-8 TAPE AND REEL SHIPMENT (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width W Tape Hole Spacing P0 (± 0.1) Component Spacing P Hole Diameter D (± 0.1/-0) Hole Diameter ...
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... REVISION HISTORY Table 16. Revision History Date Revision Oct. 2004 1 - First Issue. Description of Changes VN750SM-E 19/20 ...
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... VN750SM-E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...