VND10BSP-E STMicroelectronics, VND10BSP-E Datasheet - Page 5

• Manufacturer Part Number: VND10BSP-E
• Description: IC SMART PWR SSR 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND10BSP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 65 mOhm
• Current - Output / Channel: 3.4A
• Current - Peak Output: 14A
• Voltage - Supply: 6 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 14A
• Output Resistance: 0.1ohm
• Input Delay: 35µs
• Output Delay: 140µs
• Supply Voltage Range: 6V To 26V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (cont’d)
Table 8. Protection and Diagnostics (cont’d)
Note: 5. I
Figure 5. Note 5 relevant figure
T
Symbol
SD(hyst.)
V
t
V
V
t
V
T
povl
pol
OL
I
STAT
T
USD
TSD
SCL
OL
6. t
R
(6)
(5)
(6)
OL(off)
povl
t
pol
Status Voltage Output Low
Under Voltage Shut Down
Status Clamp Voltage
Thermal Shut-down Temperature
Thermal Shut-down Hysteresis
Reset Temperature
Open Voltage Level
Open Load Current Level
Status Delay
Status Delay
= (V
: ISO definition (see figure 6).
CC
-V
OL
)/R
Parameter
OL
(see figure 5).
I
On-State
I
I
Off-State
STAT
STAT
STAT
= 1.6 mA
= 10 mA
= –10 mA
Test Conditions
Figure 6. Note 6 relevant figure
Min.
0.15
140
125
2.5
3.5
50
5
Typ.
–0.7
160
400
3.8
15
6
5
5
2500
Max.
0.85
180
0.4
10
50
6
7
5
VN16BSP
Unit
°C
°C
°C
µs
µs
V
V
V
V
V
A
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