IPS511G International Rectifier, IPS511G Datasheet
IPS511G
Specifications of IPS511G
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IPS511G Summary of contents
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... Status feedback Open load detection Logic ground isolated from power ground Description The IPS511G/IPS512G are fully protected five terminal high side switches with built in short-circuit, over-tem- perature, ESD protection, inductive load capability and diagnostic feedback. The output current is con- trolled when it reaches I lim value. The current limitation is activated until the thermal protection acts ...
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... Diode max. pulsed current pulsed ESD1 Electrostatic discharge voltage ESD2 Electrostatic discharge voltage P d Maximum power dissipation o (rth=125 C/W) IPS511G o (rth=85 C/W, both legs on) IPS512G T j max. Max. storage & operating junction temp. Vvv max Maximum Vcc voltage Thermal Characteristics Symbol Parameter ...
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... Output leakage current I dg Diagnostic output leakage current leakage high threshold voltage low threshold voltage state IN positive current In, hyst. Input hysteresis www.irf.com rth = 100 C/W) IPS511G C/W both legs on) IPS512G Min. Typ. Max. Units Test Conditions o C — 130 150 — 130 150 ...
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... T sd- Over-temp. negative going threshold V Short-circuit detection voltage ( Open load detection threshold open load (3) Referenced Lead Assignments Vcc Vcc Vcc Vcc 1 GND IN DG OUT 8 Lead SOIC IPS511G (unless otherwise specified). Min. Typ. Max. Units Test Conditions 7 — 10 — 45 — 1.3 — ...
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... Under voltage lock out Over temperature 165°C Tj Charge 158°C pump Level driver shift Current limit + Short-circuit Open load GND T clamp Vin Iout limiting Ilim. T Tsd+ Tsd- (160 ° ) Figure 2 - Protection timing diagram IPS511G/IPS512G VCC 50V - VOUT T shutdown cycling 5 ...
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... IPS511G/IPS512G Vin Vcc 90% Vcc - 5V Vout dV/ Iout1 Eon1 Resistive load Eon2 Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Dg Vcc Out IN Gnd Vin Vout Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit 6 Vin 90% ...
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... Figure ds(on ( Figure 9 - Rds(on out (A) www.irf.com Figure 8 - Normalized R ds(on 0 Figure 10 - Max. I out (A) Vs Load Inductance (uH) IPS511G/IPS512G ...
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... IPS511G/IPS512G 5 4 1inch² footprint 3 Rthja= 60°C/W 2 Standard footprint Rth=100°C 100 Figure 11a - Max load current (A) Vs Tamb ( IPS511G Figure 12 - Transient Thermal Impedance ( Vs Time (S) - IPS511G/IPS512G Standard footprint both legs on 0 125 150 Figure 11b - Max load current (A) Vs Tamb ( -50 o C/W) ...
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... Figure 14 - Eon, Eoff (µ (A) 150 125 Diag on blanking 100 Diag off blanking Figure 16 - Diag Blanking time ( out (A) (resistive load - see Fig. 6) www.irf.com 10000 1000 100 I=1. 0.1 3 Figure Load Inductance ( H) 1.00E-03 1.00E-04 1.00E-05 1.00E- IPS511G/IPS512G I=Imax vs Induct.(see fig.10) (see Fig Figure (mA ( ...
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... IPS511G/IPS512G - IPS511G Case Outline 10 8 Lead SOIC (MS-012AA) 01-0021 09 www.irf.com ...
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... IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon www.irf.com 16 Lead SOIC (narrow body) Data and specifications subject to change without notice. IPS511G/IPS512G 01-3064 00 Tel (0) 20 8645 8000 Hong Kong Tel: (852) 2803-7380 5/9/2000 ...