VND10B-E STMicroelectronics, VND10B-E Datasheet - Page 6

• Manufacturer Part Number: VND10B-E
• Description: IC SSR HI SIDE 2CH PENTAWATT VRT
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND10B-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 65 mOhm
• Current - Output / Channel: 3.4A
• Current - Peak Output: 14A
• Voltage - Supply: 6 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
• Switch Type: High Side
• Power Switch Family: VND10B
• Power Switch On Resistance: 100mOhm
• Output Current: 14A
• Mounting: Through Hole
• Supply Current: 35uA
• Package Type: PENTAWATT V
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 5 +Tab
• Power Dissipation: 75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VND10B
Figure 7. Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in on-
state, open load in off-state, over temperature
conditions and stuck-on to V
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case
of overtemperature (tp
open load (t
discriminate the nature of the detected fault. To
protect the device against short circuit and over
current condition, the thermal protection turns the
integrated Power MOS off at a minimum junction
temperature of 140 °C. When this temperature
returns to 125 °C the switch is automatically turned
on again. In short circuit the protection reacts with
virtually no delay, the sensor (one for each
channel) being located inside each of the two
Power MOS areas. This positioning allows the
device to operate with one channel in automatic
thermal cycling and the other one on a normal
load. An internal function of the devices ensures
the fast demagnetization of inductive loads with a
typical voltage (V
allows to greatly reduces the power dissipation
according to the formula:
P
V
where f = switching frequency and
V
6/13
dem
demag
demag
= 0.5 • L
] • f
= demagnetization voltage
pol
) respectively. This feature allows to
load
demag
• (I
ovl
) of -18V. This function
load
) and in case of open
CC
)
2
.
• [(V
CC
+V
demag
)/
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V
according to the above formula. In this device if the
GND pin is disconnected, with V
16V, both channel will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1(GND) and
ground, as shown in the typical application circuit
(Figure 9).
The consequences of the voltage drop across this
diode are as follows:
– If the input is pulled to power GND, a negative
– The undervoltage shutdown level is increased
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in Figure 10), which
becomes the common signal GND for the whole
control board avoiding shift of V
This solution allows the use of a standard diode.
voltage of -V
thresholds and V
respect to power GND).
by V
f
.
f
is seen by the device. (V
STAT
are increased by V
CC
IH
CC
, V
, V
not exceeding
IL
demag
and V
IL
and f
f
STAT
, V
with
IH
.