IR3505ZMTRPBF International Rectifier, IR3505ZMTRPBF Datasheet - Page 3
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IR3505ZMTRPBF
Manufacturer Part Number
IR3505ZMTRPBF
Description
IC XPHASE3 CTLR 2.5A 16-MLPQ
Manufacturer
International Rectifier
Series
XPhase3™r
Datasheet
1.IR3505ZMTRPBF.pdf
(20 pages)
Specifications of IR3505ZMTRPBF
Package / Case
16-MLPQ
Mounting Type
Surface Mount
Current - Supply
3mA
Voltage - Supply
8 V ~ 16 V
Operating Temperature
0°C ~ 125°C
Applications
Processor
Supply Voltage Range
4.75V To 7.5V, 8V To 16V
Operating Temperature Range
0°C To +125°C
Digital Ic Case Style
MLPQ
No. Of Pins
16
Termination Type
SMD
Function
For High Performance CPUs And ASICs
Rohs Compliant
Yes
Filter Terminals
SMD
Controller Type
XPhase
Package
16-Lead MLPQ
Circuit
X-Phase Phase IC
Iout (a)
2.5A Gate Driver
Pbf
PbF Option Available
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IR3505ZMTRPBF
Manufacturer:
IR
Quantity:
20 000
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.
Typical values represent the median values, which are related to 25°C. C
otherwise specified).
8.0V ≤ V
≤1.5MHz, 0
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
GATEH Rise Time
GATEH Fall Time
GATEL Rise Time
GATEL Fall Time
GATEL low to GATEH high
delay
GATEH low to GATEL high
delay
Disable Pull-Down
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
PHSIN Threshold
PHSOUT Propagation
Delay
PHSIN Pull-Down
Resistance
PHSOUT High Voltage
PHSOUT Low Voltage
Page 3 of 20
CC
PARAMETER
≤ 16V, 4.75V ≤ V
o
C ≤ T
J
≤ 125
o
C
CCL
≤ 7.5V, 0.5V ≤ V(DACIN) ≤ 1.6V, 250kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
BOOST – SW = 7V, measure 1V to 4V
transition time
BOOST - SW = 7V, measure 4V to 1V
transition time
VCCL – PGND = 7V, Measure 1V to 4V
transition time
VCCL – PGND = 7V, Measure 4V to 1V
transition time
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEL falling to 1V to
GATEH rising to 1V
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEH falling to 1V to
GATEL rising to 1V
Note 1
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to
GATEH>1V
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
to PHSOUT > (VCCL *50%). 10pF @125
I(PHSOUT) = -10mA, measure VCCL –
PHSOUT
I(PHSOUT) = 10mA
TEST CONDITION
GATEH
o
C
= 3.3nF, C
-0.5
MIN
40
40
35
30
10
10
30
4
1
March 17, 2009
GATEL
TYP
100
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
0.0
0.6
0.4
10
20
20
80
45
75
50
15
5
5
5
= 6.8nF (unless
IR3505Z
MAX
130
125
170
2.5
2.5
2.5
1.0
0.5
10
10
20
10
40
40
57
55
35
1
UNIT
kΩ
µA
kΩ
ns
ns
ns
ns
ns
ns
ns
ns
%
%
Ω
Ω
Ω
Ω
A
A
A
A
V
V