LM4431M3-2.5/NOPB National Semiconductor, LM4431M3-2.5/NOPB Datasheet - Page 2

• Manufacturer Part Number: LM4431M3-2.5/NOPB
• Description: IC VREF PREC MICROPWR SOT23-3
• Manufacturer: National Semiconductor

Specifications of LM4431M3-2.5/NOPB

• Reference Type: Shunt
• Voltage - Output: 2.5V
• Tolerance: ±2%
• Temperature Coefficient: 30ppm/°C
• Number Of Channels: 1
• Current - Cathode: 45µA
• Current - Output: 15mA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Input: -
• Current - Quiescent: -
• Other names: LM4431M3-2.5; LM4431M3-2.5TR

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V
I
Z
e
Symbol
RMIN
N
Electrical Characteristics
Boldface limits apply for T
R
V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci-
fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
bient thermal resistance), and T
given in the Absolute Maximum Ratings, whichever is lower. For the LM4431, T
326˚C/W for the SOT-23 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
rectly into each pin.
Note 4: Typicals are at T
Note 5: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Storage Temperature
Lead Temperature
LM4431-2.5
R
V
V
Power Dissipation (T
R
R
R
M3 Package
M3 Package
/ I
/ T
Vapor phase (60 seconds)
Infrared (15 seconds)
R
Reverse Breakdown Voltage
Reverse Breakdown
VoltageTolerance
Minimum Operating Current
Average Reverse Breakdown
Voltage Temperature
Coefficient
Reverse Breakdown Voltage
Change with Operating
Current Change
Reverse Dynamic Impedance
Wideband Noise
Reverse Breakdown Voltage
Long Term Stability
J
= 25˚C and represent most likely parametric norm.
A
Parameter
= 25˚C) (Note 2)
A
(ambient temperature). The maximum allowable power dissipation at any temperature is PD
A
= T
J
= T
MIN
to T
−65˚C to +150˚C
(Note 1)
MAX
I
I
I
I
I
I
1 mA
I
I
I
10 Hz
t = 1000 hrs
T = 25˚C
I
R
R
R
R
R
RMIN
R
AC
R
R
; all other limits T
306 mW
+215˚C
+220˚C
= 100 µA
= 100 µA
= 10 mA
= 1 mA
= 100 µA
= 1 mA, f = 120 Hz
= 100 µA
= 100 µA
20 mA
10 mA
= 0.1 I
Conditions
I
I
R
R
f
±
R
0.1˚C
10 kHz
1 mA
2
15 mA
Jmax
resistor into each pin. The machine model is a 200 pF capacitor discharged di-
ESD Susceptibility
Operating Ratings
Temperature Range
Reverse Current
= 125˚C, and the typical thermal resistance (
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
A
Human Body Model (Note 3)
Machine Model (Note 3)
(T
LM4431-2.5
= T
min
J
= 25˚C.
T
A
Jmax
T
(Note 4)
Typical
max
2.500
±
±
±
120
(maximum junction temperature),
0.4
2.5
1.0
45
35
30
30
30
)
(Notes 1, 2)
max
LM4431M3
(Note 5)
= (T
Limits
±
100
1.0
1.2
8.0
25
Jmax
JA
50
), when board mounted, is
− T
0˚C
100 µA to 15 mA
A
)/
JA
JA
(junction to am-
or the number
T
mV (max)
mV (max)
mV (max)
mV (max)
mV (max)
A
µA (max)
ppm/˚C
ppm/˚C
ppm/˚C
(Limit)
µV
Units
ppm
mV
mV
µA
+70˚C
V
rms
200V
2 kV