LM3673TLX-1.5/NOPB National Semiconductor, LM3673TLX-1.5/NOPB Datasheet - Page 14
![IC CONV DC/DC 350MA 1.5V 5USMD](/photos/7/60/76032/tla05cba_sml.jpg)
LM3673TLX-1.5/NOPB
Manufacturer Part Number
LM3673TLX-1.5/NOPB
Description
IC CONV DC/DC 350MA 1.5V 5USMD
Manufacturer
National Semiconductor
Series
PowerWise®r
Type
Step-Down (Buck)r
Datasheet
1.LM3673TL-1.5NOPB.pdf
(20 pages)
Specifications of LM3673TLX-1.5/NOPB
Internal Switch(s)
Yes
Synchronous Rectifier
Yes
Number Of Outputs
1
Voltage - Output
1.5V
Current - Output
350mA
Frequency - Switching
2MHz
Voltage - Input
2.7 ~ 5.5 V
Operating Temperature
-30°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
5-MicroSMD
Power - Output
1.18W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
LM3673TLX-1.5
www.national.com
LM3673-ADJ Configurations For Various V
INDUCTOR SELECTION
There are two main considerations when choosing an induc-
tor; the inductor should not saturate, and the inductor current
ripple should be small enough to achieve the desired output
voltage ripple. Different saturation current rating specifica-
tions are followed by different manufacturers so attention
must be given to details. Saturation current ratings are typi-
cally specified at 25°C. However, ratings at the maximum
ambient temperature of application should be requested from
the manufacturer. The minimum value of inductance to
guarantee good performance is 1.76µH at I
current over the ambient temperature range. Shielded in-
ductors radiate less noise and should be preferred.
There are two methods to choose the inductor saturation cur-
rent rating.
Method 1:
The saturation current should be greater than the sum of the
maximum load current and the worst case average to peak
inductor current. This can be written as
•
•
•
•
•
•
Method 2:
A more conservative and recommended approach is to
choose an inductor that has a saturation current rating greater
than the maximum current limit of 855mA.
I
I
V
L : min inductor value including worst case tolerances
(30% drop can be considered for method 1)
f : minimum switching frequency (1.6MHz)
V
V
RIPPLE
OUTMAX
IN
OUT
1.875
OUT
1.1
1.2
1.3
1.5
1.6
1.7
1.8
2.5
2.8
3.3
: maximum input voltage in application
: output voltage
(V)
: average to peak inductor current
: maximum load current (350mA)
R1(kΩ)
240
280
320
357
442
432
464
523
402
464
562
R2 (kΩ)
200
200
200
178
200
178
178
191
100
100
100
LIM
C1 (pF)
(typ) dc
8.2
8.2
8.2
6.8
8.2
8.2
6.8
15
12
12
10
14
C2 (pF)
A 2.2 µH inductor with a saturation current rating of at least
855mA is recommended for most applications.The inductor’s
resistance should be less than 0.3Ω for good efficiency. Table
1 lists suggested inductors and suppliers. For low-cost appli-
cations, an unshielded bobbin inductor could be considered.
For noise critical applications, a toroidal or shielded-bobbin
inductor should be used. A good practice is to lay out the
board with overlapping footprints of both types for design flex-
ibility. This allows substitution of a low-noise shielded induc-
tor, in the event that noise from low-cost bobbin models is
unacceptable.
INPUT CAPACITOR SELECTION
A ceramic input capacitor of 4.7 µF, 6.3V is sufficient for most
applications. Place the input capacitor as close as possible to
the V
proved input voltage filtering. Use X7R or X5R types; do not
use Y5V. DC bias characteristics of ceramic capacitors must
be considered when selecting case sizes like 0805 and 0603.
The minimum input capacitance to guarantee good per-
formance is 2.2µF at 3V dc bias; 1.5µF at 5V dc bias
including tolerances and over ambient temperature
range. The input filter capacitor supplies current to the PFET
switch of the LM3673 in the first half of each cycle and re-
duces voltage ripple imposed on the input power source. A
ceramic capacitor’s low ESR provides the best noise filtering
of the input voltage spikes due to this rapidly changing cur-
rent. Select a capacitor with sufficient ripple current rating.
The input current ripple can be calculated as:
None
None
None
None
None
None
None
None
None
33
33
OUT
IN
pin of the device. A larger value may be used for im-
(Circuit of Figure 2)
L (µH)
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
C
IN
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
(µF)
C
OUT
10
10
10
10
10
10
10
10
10
10
10
(µF)