LM20145MH/NOPB National Semiconductor, LM20145MH/NOPB Datasheet - Page 4
![IC REG SYNC BUCK 5A ADJ 16TSSOP](/photos/7/36/73657/pkg_mxa16a_sml.jpg)
LM20145MH/NOPB
Manufacturer Part Number
LM20145MH/NOPB
Description
IC REG SYNC BUCK 5A ADJ 16TSSOP
Manufacturer
National Semiconductor
Series
PowerWise®r
Type
Step-Down (Buck)r
Datasheet
1.LM20145MHXNOPB.pdf
(22 pages)
Specifications of LM20145MH/NOPB
Internal Switch(s)
Yes
Synchronous Rectifier
Yes
Number Of Outputs
1
Voltage - Output
0.8 ~ 5 V
Current - Output
5A
Frequency - Switching
250kHz ~ 750kHz
Voltage - Input
2.95 ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-TSSOP Exposed Pad, 16-eTSSOP, 16-HTSSOP
Power - Output
2.6W
For Use With
LM20145EVAL - BOARD EVAL 5A POWERWISE LM20145
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*LM20145MH/NOPB
LM20145MH
LM20145MH
www.national.com
Enable
Thermal Shutdown
Thermal Resistance
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, T
and the ambient temperature, T
maximum power dissipations of 2.6W is determined using T
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor to each pin.
Typical Performance Characteristics
(Coilcraft MSS1038), V
waveforms, and T
Symbol
V
T
V
SD_HYS
EN_HYS
T
IH_EN
θ
SD
JA
High-Side FET Resistance vs. Temperature
Efficiency vs. Load Current (V
Parameter
EN Pin turn-on Threshold
EN Pin Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Junction to Ambient
J
= 25°C for all others.
IN
= 5V, V
A
. The maximum allowable power dissipation at any ambient temperature is calculated using: P
OUT
= 1.2V, R
IN
LOAD
= 5V)
A
= 25°C, θ
30030731
30030757
= 1.2Ω, f
JA
= 38°C/W, and T
SW
Conditions
V
= 500 kHz, T
4
Unless otherwise specified: C
EN
Rising
J_MAX
Low-Side FET Resistance vs. Temperature
Efficiency vs. Load Current (V
A
= 125°C.
= 25°C for efficiency curves, loop gain plots and
J_MAX
, the junctions-to-ambient thermal resistance, θ
IN
= C
OUT
1.08
Min
D_MAX
= 100 µF, L = 1.5 µH
= (T
IN
1.18
Typ
= 3.3V)
160
66
10
38
J_MAX
30030730
30030758
– T
Max
1.28
A
)/θ
JA
. The
°C/W
Unit
mV
°C
°C
V
JA
,