IR082H4C10U-P2 International Rectifier, IR082H4C10U-P2 Datasheet

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IR082H4C10U-P2

Manufacturer Part Number
IR082H4C10U-P2
Description
IC CONTROL 9-SIP
Manufacturer
International Rectifier
Datasheet
1.IR082H4C10U-P2.pdf (7 pages)

Specifications of IR082H4C10U-P2

Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies, along
with the power IGBT technology, enable ruggedized
single package construction. The logic inputs are
compatible with standard CMOS or LSTTL outputs.
The front-end features an independent high and low
side driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the high
and low side power IGBT’s are matched to simplify
use. The device can operate up to 600 volts.
Output Power IGBT’s in half-bridge configuration
600V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
Undervoltage lockout
5V Schmitt-triggered input logic
Metal heatsink back for improved P D
prevention logic (IR082HD4C10U-P2)
HIGH VOLTAGE HALF BRIDGE
Product Summary
Package
P
D
Preliminary Data Sheet No. PD60171-C
V
V
IR062HD4C10U-P2
IR082HD4C10U-P2
CE(ON)
(T
IN
A
(max)
= 25 )
typ
°C
600V
3.0W
3.0V
7 Pin

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IR082H4C10U-P2 Summary of contents

Page 1

Features Output Power IGBT’s in half-bridge configuration 600V rated breakdown voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) Undervoltage lockout ...

Page 2

IR062HD4C10U-P2 IR082HD4C10U-P2 Typical Connections Please note this info sheet contains advance information which may change before the product is released ...

Page 3

Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power ...

Page 4

IR062HD4C10U-P2 IR082HD4C10U-P2 Dynamic Electrical Characteristics 15V and T = 25°C unless otherwise specified. Switching time waveform definitions are shown in BIAS figure 2. Refer to IC data sheets (IR2106 and IR2108) ...

Page 5

Functional Block Diagram ...

Page 6

IR062HD4C10U-P2 IR082HD4C10U-P2 Case Outline - 7 pin 4X 5.08 (.100) 2X 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) 6 NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) ...

Page 7

LIN LIN Figure 1. Input/Output Timing Diagram IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom IR JAPAN: ...

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