MCZ79076EG Freescale Semiconductor, MCZ79076EG Datasheet - Page 8

• Manufacturer Part Number: MCZ79076EG
• Description: IC IGNITION CTRL ELECTR 16-SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MCZ79076EG

• Applications: *
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. Static Electrical Characteristics (continued)
values noted reflect the approximate parameter means at
8
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
CONTROLS
Notes
Reference High/Un-Clamped
Reference High/Clamped
Dwell Control Negative Clamp Voltage
Dwell Control Positive Clamp Voltage
Dwell Control Charge Current
Dwell Control Discharge Current
Dwell Control Input Current
RPM Detect Charge Current ON
RPM Detect Current
RPM Detect Clamp Voltage
18.
19.
20.
21.
22.
23.
24.
25.
26.
Characteristics noted under conditions
V
1.0 V, EST = Bypass = 0 V
V
I
I
V
= Bypass = 0 V
V
EST = Bypass = 0 V
V
= Bypass = 0 V
V
= Bypass = 0 V
V
Control = 7.0 V
V
V
RPM Detect = 0.5 V
RPM Detect = 1.5 V
V
0 V, RPM Detect = sourcing 16 µA
R
R
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= sourcing 10 µA
= sourcing 1.0 mA
Dwell Control adjusts the reference voltage of Dwell Comparator.
Dwell Control. sourcing 100 µA.
Dwell Control sinking 100 µA.
Dwell Control at 3.0 V; Internal Dwell Control transistor OFF.
Dwell Control at 3.0 V; Internal Dwell Control transistor ON.
Dwell Control at 7.0 V; Internal Dwell Control transistor OFF.
Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See
Applications on page 10
Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current.
on page 10
Q53 and Q54 both ON; RPM Detect sinking 16 µA.
= 16 V, I
= 16 V, I
= 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST
= 4.0 V, I
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
= 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST
= 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
= 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass =
DC
DC
R
= sinking 100 µA, Ref/Dwell = 1.0 V, Advance = Open,
= sourcing 100 µA, Ref/Dwell = Advance = 1.0 V, EST
= sourcing 100 mA, Ref/Dwell = 3.0 V, Advance =
(27)
(27)
Characteristic
(27)
(27)
(27)
(27)
(27)
(27)
(27)
(27)
7.0 V ≤ V
CC
Typical Applications on page 10
≤ 18 V, - 40°C ≤ T
T
A
=
25°C under nominal conditions unless otherwise noted.
V
I
(DC)DISCHG
I
I
V
V
V
I
I
(RPM)CHG
Symbol
(R)HI/UNCL
V
(RPM)LKG
(DC)SINK
(DC)CHG
(RPM)CL
(R)HI/CL
(DC)+CL
(DC)-CL
A
≤ 125°C, GND = 0 V
04.0
Min
-4.0
-0.1
3.2
0.5
8.0
2.4
12
30
18
-
-
Analog Integrated Circuit Device Data
unless otherwise noted. Typical
3.36
5.41
15.3
0.54
0.55
0.01
Typ
0.7
8.2
1.1
2.5
47
33
Freescale Semiconductor
Max
Typical Applications
6.0
0.8
8.4
2.5
1.0
1.0
0.1
2.7
58
48
-
-
Typical
Unit
mA
µA
µA
µA
µA
V
V
V
V
V