SI8430AB-D-IS1 Silicon Laboratories Inc, SI8430AB-D-IS1 Datasheet - Page 15
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SI8430AB-D-IS1
Manufacturer Part Number
SI8430AB-D-IS1
Description
IC ISOLATOR 3CH 5.5V 16-SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Datasheet
1.SI8431AB-D-IS.pdf
(36 pages)
Specifications of SI8430AB-D-IS1
Number Of Channels
3
Package / Case
16-SOIC (0.300", 7.5mm Width)
Inputs - Side 1/side 2
3/0
Isolation Rating
2500Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
1Mbps
Propagation Delay
35ns
Output Type
Tri-State
Operating Temperature
-40°C ~ 125°C
Mounting Style
SMD/SMT
Propagation Delay Time
35 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Supply Current
6 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
336-1757-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI8430AB-D-IS1R
Manufacturer:
PHILIPS
Quantity:
1 156
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Table 10. IEC Safety Limiting Values
Parameter
Basic Isolation Group
Installation Classification
Parameter
Maximum Working Insulation Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
Parameter
Case Temperature
Safety input, output, or
supply current
Device Power
Dissipation
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si843x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
40/125/21.
wave.
2
Symbol
S
, V
P
T
I
S
IO
S
D
= 500 V
V
I
= 5.5 V, T
JA
105 °C/W (NB SOIC-16),
Material Group
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
= 100 °C/W (WB SOIC-16),
1
Symbol
V
V
Test Condition
V
IORM
IOTM
R
PR
S
J
= 150 °C, T
Rev. 1.3
(V
Production Test, t
Partial Discharge < 5 pC)
Test Conditions
IORM
A
Test Condition
= 25 °C
x 1.875 = V
Method b1
t = 60 sec
RMS
RMS
RMS
RMS
Min Typ
—
—
—
m
PR
= 1 sec,
, 100%
—
—
—
Si8430/31/35
SOIC-16
WB
150
220
275
Characteristic
Max
1050
4000
>10
560
2
Specification
SOIC-16
9
150
210
275
NB
I-IV
I-III
I-II
I-II
I
V peak
V peak
V peak
Unit
Unit
mW
mA
°C
15