SI8455BB-A-IS1 Silicon Laboratories Inc, SI8455BB-A-IS1 Datasheet

IC ISOLATOR DGTL 5CH 16SOIC

SI8455BB-A-IS1

Manufacturer Part Number
SI8455BB-A-IS1
Description
IC ISOLATOR DGTL 5CH 16SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Datasheets

Specifications of SI8455BB-A-IS1

Inputs - Side 1/side 2
5/0
Number Of Channels
5
Isolation Rating
2500Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
150Mbps
Propagation Delay
6ns
Output Type
Tri-State
Package / Case
16-SOIC (3.9mm Width)
Operating Temperature
-40°C ~ 125°C
Operating Supply Voltage (typ)
3.3/5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I S O
Features
Applications
Safety Regulatory Approvals
Description
Silicon Lab's family of ultra low power digital isolators are CMOS devices
that employ an RF coupler to transmit digital information across an isolation
barrier. Very high speed operation at low power levels is achieved. These
devices are available in 16-pin wide-body and narrow-body SOIC packages.
Two speed grade options (1 and 150 Mbps) are available and achieve worst-
case propagation delays of less than 10 ns.
Block Diagram
Rev. 1.2 12/09
High-speed operation:
DC to 150 Mbps
Low propagation delay:
<10 ns worst case
Wide Operating Supply Voltage:
2.70–5.5 V
Ultra low power (typical)
5 V Operation:



2.70 V Operation:



Isolated switch mode supplies
Isolated ADC, DAC
UL 1577 recognized

CSA component notice 5A approval

NC
A2
A3
A4
A5
A1
<1.6 mA per channel at 1 Mbps
<1.9 mA per channel at 10 Mbps
<6 mA per channel at 100 Mbps
<1.4 mA per channel at 1 Mbps
<1.7 mA per channel at 10 Mbps
<4 mA per channel at 100 Mbps
2500 V
IEC 60950, 61010 approved
P R O
Si8450/55
RMS
for 1 minute
L
O W
B1
B2
B4
B5
EN2/NC
B3
EN1
A2
A3
A4
A5
P
A1
O W E R
Si8451
Copyright © 2009 by Silicon Laboratories
Precise timing (typical):



Up to 2500 V
Transient Immunity: 25 kV/µs
Tri-state outputs with ENABLE
control
DC correct
No start-up initialization required
15 µs startup time
High temperature operation:
125 °C at 150 Mbps
Wide body and narrow body SOIC-
16 packages
RoHS-compliant
Motor control
Power factor correction systems
VDE certification conformity

F
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
IEC 60747-5-2
(VDE0884 Part 2)
B1
B2
B3
B4
B5
EN2
I V E
EN1
A2
A3
A4
A5
A1
- C
RMS
H A N N E L
isolation
Si8452
B5
EN2
B1
B2
B3
B4
S i 8 4 5 0 / 5 1 / 5 2 / 5 5
D
Patents pending
I G I TA L
EN1/NC
GND1
V
EN1/NC
DD1
A1
A2
A3
A4
A5
GND1
V
DD1
A1
A2
A4
A3
A5
Narrow Body SOIC
Top View (Si8450/51/52)
Top View (Si8450/51/52)
Wide Body SOIC
Pin Assignments
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
S O L A T O R
16
15
14
13
12
11
10
9
Si8450/51/52/55
16
15
14
13
12
11
10
9
B5
EN2
V
B1
B2
B3
B4
GND2
DD2
B1
B2
B3
B4
B5
GND2
EN2
V
DD2

Related parts for SI8455BB-A-IS1

SI8455BB-A-IS1 Summary of contents

Page 1

... IEC 60950, 61010 approved  Description Silicon Lab's family of ultra low power digital isolators are CMOS devices that employ an RF coupler to transmit digital information across an isolation barrier. Very high speed operation at low power levels is achieved. These devices are available in 16-pin wide-body and narrow-body SOIC packages. ...

Page 2

Si8450/51/52/55 2 Rev. 1.2 ...

Page 3

T C ABLE O F ONTENTS Section 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

Si8450/51/52/55 1. Electrical Specifications Table 1. Electrical Characteristics ( V±10 V±10%, T DD1 DD2 A Parameter Symbol High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage ...

Page 5

Table 1. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8450Bx, Si8455Bx V ...

Page 6

Si8450/51/52/55 Table 1. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol Si845xBx Maximum Data Rate Minimum Pulse Width Propagation Delay t PHL Pulse Width Distortion | PLH PHL ...

Page 7

V Typical Input t PLH 90% 90% 1.4 V 10% 10% Typical Output t r Figure 2. Propagation Delay Timing Si8450/51/52/55 t PHL t f Rev. 1.2 7 ...

Page 8

Si8450/51/52/55 Table 2. Electrical Characteristics (V = 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 1 Output Impedance Enable ...

Page 9

Table 2. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8450Bx, Si8455Bx V DD1 V ...

Page 10

Si8450/51/52/55 Table 2. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter Si845xBx Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion | PLH PHL 2 Propagation Delay Skew ...

Page 11

Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow and wide-body SOIC packages) DD1 DD2 A Parameter High Level Input Voltage Low Level Input Voltage High Level Output ...

Page 12

Si8450/51/52/55 Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow and wide-body SOIC packages) DD1 DD2 A Parameter 10 Mbps Supply Current (All inputs = 5 MHz square ...

Page 13

Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow and wide-body SOIC packages) DD1 DD2 A Parameter Si845xBx Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width ...

Page 14

Si8450/51/52/55 Table 4. Absolute Maximum Ratings Parameter 2 Storage Temperature Ambient Temperature Under Bias 3 Supply Voltage (Revision A) 3 Supply Voltage (Revision B) Input Voltage Output Voltage Output Current Drive Channel Lead Solder Temperature (10 s) Maximum Isolation Voltage ...

Page 15

Table 7. Insulation and Safety-Related Specifications Parameter 1 Nominal Air Gap (Clearance) Nominal External Tracking (Creepage) Minimum Internal Gap (Internal Clearance) Tracking Resistance (Comparative Tracking Index) 2 Resistance (Input-Output) 2 Capacitance (Input-Output) 3 Input Capacitance Notes: 1. The values in ...

Page 16

Si8450/51/52/55 Table 9. IEC 60747-5-2 Insulation Characteristics for Si845xxB* Parameter Maximum Working Insulation Voltage Input to Output Test Voltage Highest Allowable Overvoltage (Transient Overvoltage sec) TR Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance at T ...

Page 17

Table 11. Thermal Characteristics Parameter Symbol  IC Junction-to-Air Thermal JA Resistance 500 400 300 200 100 0 Figure 3. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 500 400 300 ...

Page 18

Si8450/51/52/55 Table 12. Si845x Logic Operation Table V EN VDDI I 1,2,3,4 1,5,6 1,2 Input State Input ...

Page 19

P/N 1,2 1,2 EN1 EN2 Si8450 — H Outputs B1, B2, B3, B4, B5 are enabled and follow input state. — L Outputs B1, B2, B3, B4, B5 are disabled and Logic Low or in high impedance state. Si8451 H ...

Page 20

Si8450/51/52/55 2. Typical Performance Characteristics The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Tables 1, 2, and 3 for actual specification limits ...

Page 21

Falling Edge -40 - Temperature (Degrees C) Figure 11. Propagation Delay vs. Temperature Rising Edge 80 100 120 Rev. 1.2 Si8450/51/52/55 21 ...

Page 22

Si8450/51/52/55 3. Application Information 3.1. Theory of Operation The operation of an Si845x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path ...

Page 23

Eye Diagram Figure 14 illustrates an eye-diagram taken on an Si8450. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8450 ...

Page 24

Si8450/51/52/55 3.3. Layout Recommendations Dielectric isolation is a set of specifications produced by the safety regulatory agencies from around the world that describes the physical construction of electrical equipment that derives power from a high-voltage power system such as 100–240 ...

Page 25

RF Radiated Emissions The Si845x family uses a RF carrier frequency of approximately 700 MHz. This results in a small amount of radiated emissions at this frequency and its harmonics. The radiation is not from the IC chip but ...

Page 26

... Power Supply Bypass Capacitors (Revision A Only) When using the ISOpro isolators with power supplies > 4.5 V, sufficient VDD bypass capacitors must be present on both the VDD1 and VDD2 pins to ensure the VDD rise time is less than 0.5 V/µs (which is > 9 µs for a > 4.5 V supply). Although rise time is power supply dependent, > ...

Page 27

Pin Descriptions (Si8450/51/52) Narrow Body SOIC 1 V DD1 EN1/NC 8 GND1 Top View (Si8450/51/52) Name SOIC-16 Pin DD1 ...

Page 28

Si8450/51/52/55 6. Pin Descriptions (Si8455) Narrow Body SOIC 1 V DD1 2 GND1 GND1 Top View (Si8455) Name SOIC-16 Pin DD1 GND1 ...

Page 29

... Si8452AB-B-IS1 3 Si8452BB-B-IS1 3 Si8455BB-B-IS1 5 Notes: 1. All packages are RoHS-compliant. Moisture sensitivity level is MSL2A with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications and peak solder temperature. 2. Revision A devices are supported for existing designs, but Revision B is recommended for all new designs. ...

Page 30

... Si8452BB-A-IS1 3 2 Si8455BB-A-IS1 5 Notes: 1. All packages are RoHS-compliant. Moisture sensitivity level is MSL2A with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications and peak solder temperature. 2. Revision A devices are supported for existing designs, but Revision B is recommended for all new designs. ...

Page 31

Package Outline: 16-Pin Wide Body SOIC Figure 18 illustrates the package details for the Si845x Digital Isolator. Table 17 lists the values for the dimensions shown in the illustration. Table 17. Package Diagram Dimensions Figure 18. 16-Pin Wide Body ...

Page 32

Si8450/51/52/55 9. Landing Pattern: 16-Pin Wide-Body SOIC Figure 19 illustrates the recommended landing pattern details for the Si845x in a 16-pin wide-body SOIC. Table 18 lists the values for the dimensions shown in the illustration. Table 18. 16-Pin Wide Body ...

Page 33

Package Outline: 16-Pin Narrow Body SOIC Figure 20 illustrates the package details for the Si845x in a 16-pin narrow-body SOIC (SO-16). Table 19 lists the values for the dimensions shown in the illustration. Figure 20. 16-pin Small Outline Integrated ...

Page 34

Si8450/51/52/55 Table 19. Package Diagram Dimensions (Continued) h θ aaa bbb ccc ddd Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid ...

Page 35

Landing Pattern: 16-Pin Narrow Body SOIC Figure 21 illustrates the recommended landing pattern details for the Si845x in a 16-pin narrow-body SOIC. Table 20 lists the values for the dimensions shown in the illustration. Figure 21. 16-Pin Narrow Body ...

Page 36

Si8450/51/52/55 12. Top Marking: 16-Pin Wide Body SOIC Figure 22. Si8450/51/52/55 Top Marking Line 1 Marking: Base Part Number Ordering Options (See Ordering Guide for more information). Line 2 Marking Year WW = Workweek TTTTTT = Mfg Code ...

Page 37

Top Marking: 16-Pin Narrow Body SOIC Figure 23. 16-Pin Narrow Body SOIC Top Marking Table 22. 16-Pin Narrow Body SOIC Top Marking Table Base Part Number Ordering Options Line 1 Marking: (See Ordering Guide for more information). Circle = ...

Page 38

Si8450/51/52/ OCUMENT HANGE IST Revision 0.1 to Revision 0.2  Updated all specs to reflect latest silicon.  Added "4. Errata and Design Migration Guidelines (Revision A Only)" on page 26.  Added "13. Top Marking: 16-Pin ...

Page 39

N : OTES Si8450/51/52/55 Rev. 1.2 39 ...

Page 40

... Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap- plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages. Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders. ...

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