SI8405AA-B-IS1 Silicon Laboratories Inc, SI8405AA-B-IS1 Datasheet - Page 10

• Manufacturer Part Number: SI8405AA-B-IS1
• Description: IC ISOLATOR BIDIR I2C 16-SOIC
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8405AA-B-IS1

• Number Of Channels: 6
• Package / Case: 16-SOIC (3.9mm Width)
• Inputs - Side 1/side 2: 3/3
• Isolation Rating: 1000Vrms
• Voltage - Supply: 3 V ~ 5.5 V
• Data Rate: 10Mbps
• Output Type: Open Drain
• Operating Temperature: -40°C ~ 125°C
• Mounting Style: SMD/SMT
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 3 V
• Supply Current: 6.2 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Propagation Delay: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si840x
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
10
Table 10. IEC Safety Limiting Values
Parameter
Basic Isolation Group
Installation Classification
Parameter
Maximum Working Insulation Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
Parameter
Case Temperature
Safety Input Current
Device Power Dissipation
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 3 and Figure 4.
2. The Si840x is tested with AVDD, BVDD = 5.5 V; T
40/125/21.
50% duty cycle square wave.
S
2
, V
IO
= 500 V
Material Group
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
1
Symbol
V
V
V
IORM
IOTM
R
PR
S
Symbol
J
Rev. 1.3
P
= 150 ºC; C
T
I
S
S
D
(V
Production Test, t
Partial Discharge < 5 pC)
Test Conditions
IORM
AVDD, BVDD = 5.5 V,
SOIC-16), 140 °C/W
Test Condition

1
x 1.875 = V
JA
, C
Test Condition
Method b1
t = 60 sec
(NB SOIC-8)
T
= 105 °C/W (NB
2
T
J
= 0.1 µF; C
A
= 150 °C,
= 25 °C
RMS
RMS
RMS
RMS
m
PR
= 1 sec,
, 100%
3
= 15 pF; R1, R2 = 3kinput 1 MHz
SOIC-8
150
160
220
NB
Characteristic
1050
4000
>10
560
SOIC-16
2
Specification
9
150
210
275
NB
I-IV
I-III
I-II
I-II
I
V peak
V peak
V peak
Unit
Unit
mA
°C
W
