SI8461BB-B-IS1 Silicon Laboratories Inc, SI8461BB-B-IS1 Datasheet
SI8461BB-B-IS1
Specifications of SI8461BB-B-IS1
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SI8461BB-B-IS1 Summary of contents
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... IEC 60950, 61010 approved Description Silicon Lab's family of ultra low power digital isolators are CMOS devices that employ an RF coupler to transmit digital information across an isolation barrier. Very high speed operation at low power levels is achieved. These devices are available in a 16-pin narrow-body SOIC package. Two speed grade options (1 and 150 Mbps) are available and achieve worst-case propagation delays of less than 10 ns ...
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Si8460/61/62/63 2 Rev. 1.2 ...
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T C ABLE O F ONTENTS Section 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Si8460/61/62/63 1. Electrical Specifications Table 1. Electrical Characteristics ( V±10 V±10%, T DD1 DD2 A Parameter Symbol High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage ...
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Table 1. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol 1 Mbps Supply Current (All inputs = 500 kHz square wave all outputs) Si8460Ax ...
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Si8460/61/62/63 Table 1. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V ...
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Table 1. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol All Models Output Rise Time Output Fall Time Common Mode Transient CMTI Immunity 3 Start-up Time Notes: 1. The nominal output ...
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Si8460/61/62/63 Table 2. Electrical Characteristics (V = 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 1 Output Impedance DC ...
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Table 2. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter 1 Mbps Supply Current (All inputs = 500 kHz square wave all outputs) Si8460Ax DD1 V ...
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Si8460/61/62/63 Table 2. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 V ...
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Table 2. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter All Models Output Rise Time Output Fall Time Common Mode Transient Immunity at Logic Low Output 3 Start-up Time Notes: 1. The nominal ...
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Si8460/61/62/63 Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage ...
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Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter 1 Mbps Supply Current (All inputs = 500 kHz square wave ...
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Si8460/61/62/63 Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter 100 Mbps Supply Current (All inputs = 50 MHz square wave, CI ...
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Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter All Models Output Rise Time Output Fall Time Common Mode Transient Immunity at ...
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Si8460/61/62/63 Table 4. Absolute Maximum Ratings Parameter 2 Storage Temperature Ambient Temperature Under Bias 3 Supply Voltage (Revision A) 3 Supply Voltage (Revision B) Input Voltage Output Voltage Output Current Drive Channel Lead Solder Temperature (10 s) Maximum Isolation Voltage ...
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Table 6. Regulatory Information* CSA The Si846x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. VDE The Si846x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL The Si846x is ...
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Si8460/61/62/63 Table 9. IEC 60747-5-2 Insulation Characteristics for Si846xxB* Parameter Maximum Working Insulation Voltage Input to Output Test Voltage Highest Allowable Overvoltage (Transient Overvoltage sec) TR Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance at T ...
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Table 11. Thermal Characteristics Parameter Symbol IC Junction-to-Air Thermal Resistance 500 400 300 200 100 0 0 Figure 2. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Table 12. Si846x Logic ...
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Si8460/61/62/63 2. Typical Performance Characteristics The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Tables 1, 2, and 3 for actual specification limits ...
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Data Rate (Mbps) Figure 9. Si8463 Typical DD1 Current vs. Data ...
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Si8460/61/62/63 3. Application Information 3.1. Theory of Operation The operation of an Si846x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path ...
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Eye Diagram Figure 13 illustrates an eye-diagram taken on an Si8460. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8460 ...
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Si8460/61/62/63 3.3. Layout Recommendations Dielectric isolation is a set of specifications produced by the safety regulatory agencies from around the world that describes the physical construction of electrical equipment that derives power from a high-voltage power system such as 100–240 ...
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RF Radiated Emissions The Si846x family uses a RF carrier frequency of approximately 700 MHz. This results in a small amount of radiated emissions at this frequency and its harmonics. The radiation is not from the IC but, rather, ...
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... Power Supply Bypass Capacitors (Revision A Only) When using the ISOpro isolators with power supplies > 4.5 V, sufficient VDD bypass capacitors must be present on both the VDD1 and VDD2 pins to ensure the VDD rise time is less than 0.5 V/µs (which is > 9 µs for a > 4.5 V supply). Although rise time is power supply dependent, > ...
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Pin Descriptions Name SOIC-16 Pin DD1 GND1 8 GND2 DD2 ...
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Si8460/61/62/63 6. Ordering Guide Revision B devices are recommended for all new designs. Isolator Product Data channel count Reverse channel count Max Data Rate (A=1Mbps,B=150Mbps) Insulation Rating (A=1kV, B=2.5kV) Product Revision Temp Range (I=-40 to +125C) Package Type (S=SOIC) Package ...
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... Table 15. Ordering Guide for Valid OPNs Ordering Part Number of Number (OPN) Inputs VDD1 Side Si8460AB-B-IS1 6 Si8460BB-B-IS1 6 Si8461AB-B-IS1 5 Si8461BB-B-IS1 5 Si8462AB-B-IS1 4 Si8462BB-B-IS1 4 Si8463AB-B-IS1 3 Si8463BB-B-IS1 3 2 Revision A Devices 2 Si8460AA-A-IS1 6 2 Si8460BA-A-IS1 6 2 Si8461AA-A-IS1 5 2 Si8461BA-A-IS1 5 2 Si8462AA-A-IS1 4 2 Si8462BA-A-IS1 4 2 Si8463AA-A-IS1 3 2 Si8463BA-A-IS1 3 2 Si8460AB-A-IS1 ...
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Si8460/61/62/63 7. Package Outline: 16-Pin Narrow Body SOIC Figure 17 illustrates the package details for the Si846x in a 16-pin narrow-body SOIC (SO-16). Table 16 lists the values for the dimensions shown in the illustration. Figure 17. 16-pin Small Outline ...
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Table 16. Package Diagram Dimensions (Continued) h 0.25 θ aaa bbb ccc ddd Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid ...
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Si8460/61/62/63 8. Landing Pattern: 16-Pin Narrow Body SOIC Figure 18 illustrates the recommended landing pattern details for the Si846x in a 16-pin narrow-body SOIC. Table 17 lists the values for the dimensions shown in the illustration. Figure 18. 16-Pin Narrow ...
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Top Marking: 16-Pin Narrow Body SOIC Figure 19. 16-Pin Narrow Body SOIC Top Marking Table 18. 16-Pin Narrow Body SOIC Top Marking Table Line 1 Marking: Base Part Number Ordering Options (See Ordering Guide for more information). Line 2 ...
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Si8460/61/62/ OCUMENT HANGE IST Revision 0.1 to Revision 0.2 Updated all specs to reflect latest silicon. Added "4. Errata and Design Migration Guidelines (Revision A Only)" on page 26. Added "9. Top Marking: 16-Pin ...
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N : OTES Si8460/61/62/63 Rev. 1.2 35 ...
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