SFH620A-1 Vishay, SFH620A-1 Datasheet - Page 2

• Manufacturer Part Number: SFH620A-1
• Description: OPTOCOUPLER PHOTOTRANS 125% 4DIP
• Manufacturer: Vishay

Specifications of SFH620A-1

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 13% @ 1mA
• Current Transfer Ratio (max): 125% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 751-1357-5; SFH620A-1GI; SFH620A-1GI

SFH620A, SFH6206
Vishay Semiconductors
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
(1)
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
INPUT
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage between emitter and detector
Isolation voltage
Total power dissipation
Creepage distance
Clearance distance
Insulation thickness between emitter and detector
Comparative tracking index per DIN IEC112/
VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
INPUT
Forward voltage
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Thermal resistance
COUPLER
Collector emitter saturation voltage
Coupling capacitance
Collector emitter leakage current
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
evaluation. Typical values are for information only and are not part of the testing requirements.
Still air, coupler soldered to PCB or base.
(1)
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
F
V
= ± 10 mA, I
V
TEST CONDITION
CE
R
= 0 V, f = 1 MHz
I
= 5 V, f = 1 MHz
amb
F
V
amb
= ± 60 mA
CE
max. 10 s, dip soldering distance
= 25 °C, unless otherwise specified)
= 10 V
V
V
= 25 °C, unless otherwise specified)
IO
IO
C
= 500 V, T
TEST CONDITION
= 2.5 mA
= 500 V, T
AC Input
t
p
t
p
t = 1 s
 10 μs
 1 μs
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amb
amb
SFH620A-1
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
= 100 °C
= 25 °C
PART
SYMBOL
V
R
R
I
I
I
I
I
I
C
SYMBOL
CEsat
C
C
CEO
CEO
CEO
CEO
CEO
CEO
V
thja
thja
CE
V
F
O
C
P
P
T
I
V
V
V
P
CTI
T
T
R
R
FSM
IORM
I
I
amb
I
diss
diss
ISO
T
stg
CE
EC
sld
C
C
tot
F
IO
IO
j
MIN.
- 55 to + 150
- 55 to + 100
VALUE
10
10
± 2.5
5300
± 60
100
100
150
890
250
175
100
260
TYP.
7
7
4
1.25
0.25
70
50
750
500
6.8
0.2
7
50
2
2
2
2
5
5
Document Number: 83675
12
11
Rev. 1.9, 23-Feb-11
MAX.
1.65
100
100
0.4
50
50
50
50
UNIT
V
mW
mW
mW
mm
mm
mm
mA
mA
mA
V
°C
°C
°C
°C
RMS


A
V
V
P
UNIT
°C/W
K/W
pF
pF
pF
nA
nA
nA
nA
nA
nA
V
V