TLP621(F,T) Toshiba, TLP621(F,T) Datasheet - Page 2
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TLP621(F,T)
Manufacturer Part Number
TLP621(F,T)
Description
PHOTOCOUPLER TRANS-OUT 4-DIP
Manufacturer
Toshiba
Specifications of TLP621(F,T)
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
55V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Configuration
1 Channel
Maximum Collector Emitter Voltage
55 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Forward Current
25 mA
Maximum Fall Time
3 us
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Maximum Rise Time
2 us
Output Device
Phototransistor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP621FT
● Current Transfer Ratio
*3
*4
*2
UL recognized
BSI approved
SEMKO approved
TLP621−2
TLP621−4
TLP621
*1: Ex. rank GB: TLP621 (GB)
(Note) Application type name for certification test, please use standard product type name, i.e.
Type
UL1577
BS EN60065: 2002, BS EN60950-1: 2002
EN60950 (approved is TLP621 only)
Rank GR
Rank GB
Rank GB
Rank BL
TLP621 (GB): TLP621
TLP621−2 (GB): TLP621−2
Classi−
fication
Rank Y
(None)
(None)
*1
E67349
6508, 7445
9735090 / 01
I
F
Made In Japan
= 5mA, V
Current Transfer Ratio
Min.
100
200
100
100
50
50
50
(%) (I
CE
= 5V, Ta = 25°C
C
/ I
*2
*3
*4
F
)
Max.
600
150
300
600
600
600
600
E152349
6505, 7445
Made In Thailand
2
G, G
G, G
Blank, Y, Y
Y, Y
B, B
Blank, GR, BL, GB
GR, BL, GB
―
■
■
■
■
, B, B
■
Classification
■
*2
*3
, G, G
, GB
Marking Of
TLP621,TLP621−2,TLP621−4
■
, B, B
■
, GB
2007-10-01