TLP627(F,T) Toshiba, TLP627(F,T) Datasheet - Page 39

• Manufacturer Part Number: TLP627(F,T)
• Description: PHOTOCOUPLER HS DARL-OUT 4-DIP
• Manufacturer: Toshiba

Specifications of TLP627(F,T)

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 1000% @ 1mA
• Voltage - Output: 300V
• Current - Output / Channel: 150mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 1.2V
• Output Type: Darlington
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 4000 %
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Maximum Fall Time: 15 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Maximum Rise Time: 40 us
• Output Device: Darlington
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TLP627; TLP627; TLP627F; TLP627FT; TLP627T

Transistor-Output and Darlington-Transistor-Output Photocouplers (Continued)
Photocouplers for IGBT/MOSFET Gate Drive
*
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Some of the photocouplers with triac output are also manufactured by Toshiba Semiconductor Thailand Co.,Ltd. For detailed information, please contact your nearest Toshiba sales
representative.
Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
TLP184*
TLP185*
TLP280
TLP281
TLP284
TLP285
TLP620
TLP620-2
TLP627
TLP627-2
TLP290-4*
TLP291-4*
TLP155E
Part Number
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
16
16
Pin Configuration
1
1
15
15
8
1
8
1
2
2
6
1
14
14
3
3
4
1
4
1
6
1
6
1
4
1
4
1
4
1
4
1
7
2
7
2
13
13
4
4
: Design which meets safety standard/approval pending as of January 2011
5
12
12
5
5
6
3
6
3
4
3
4
3
3
2
3
2
3
2
3
2
3
2
3
2
11
11
6
6
10
10
4
3
7
7
5
4
5
4
9
8
9
8
SO6 (reinforced insulation)
AC input
SO6 (reinforced insulation)
SOP4
Lead pitch = 1.27 mm
AC input
SOP4
Lead pitch = 1.27 mm
General-purpose
SEMKO-approved
SOP4 (reinforced insulation)
Lead pitch = 1.27 mm
Creepage/clearance ≥ 5 mm
Isolation thickness ≥ 0.4 mm
AC input
SOP4 (reinforced insulation)
Lead pitch = 1.27 mm
Creepage/clearance ≥ 5 mm
Isolation thickness ≥ 0.4 mm
SEMKO-approved
DIP4
Transistor output
AC input
SEMKO-approved
DIP8
Dual-channel version of
the TLP620
SEMKO-approved
DIP4
Darlington transistor output
High V
SEMKO-approved
DIP8
Dual-channel version of
the TLP627
SEMKO-approved
SO16
4-channel version
Lead pitch = 1.27 mm
AC input
SO16
4-channel version
Lead pitch = 1.27 mm
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
opr
= 100°C (max)
CEO
Features
Features
: Approved (reinforced insulation)
Propagation
Delay Time
39
300 V
300 V
80 V
80 V
80 V
80 V
80 V
80 V
55 V
55 V
V
80 V
80 V
0.2 μs
(Max)
CEO
@1 Minute
3750
Vrms
3750
Vrms
2500
Vrms
2500
Vrms
3750
Vrms
3750
Vrms
5000
Vrms
5000
Vrms
5000
Vrms
5000
Vrms
Vrms
Vrms
2500
2500
BVs
current (max):
Peak output
: Design which meets safety standard/approval pending as of January 2011
Output
±0.6 A
UL
7.5 mA
(Max)
I
FHL
c-UL
—
—
—
—
Vrms
3750
BVs
Safety Standards
UL/cUL TÜV
TÜV
/
(1)
(1)
(1)
(1)
(1)
Safety Standards
VDE
(1)
(1)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
VDE
BSI
BSI
(2)
IEC
IEC