TCET4100 Vishay, TCET4100 Datasheet

OPTOCP PHOTOTRANS 4CH 600% 16DIP

TCET4100

Manufacturer Part Number
TCET4100
Description
OPTOCP PHOTOTRANS 4CH 600% 16DIP
Manufacturer
Vishay
Datasheet

Specifications of TCET4100

Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Number Of Channels
4
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Output Type
Transistor
Package / Case
16-DIP (0.300", 7.62mm)
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
4
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
4
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1371-5
TCET4100
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
Agency Approvals
Applications
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso-
lation):
• For appl. class I - IV at mains voltage ≤ 300 V
• For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2.
Document Number 83727
Rev. 1.4, 26-Oct-04
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage)
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
• UL1577, File No. E76222 System Code U, Double
• CSA 22.2 bulletin 5A, Double Protection
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
• FIMKO
V
and WEEE 2002/96/EC
Protection
DIN EN 60747-5-5 pending
IOTM
= 8 kV peak
Description
The TCET2100/ TCET4100 consists of a phototrans-
istor optically coupled to a gallium arsenide infrared-
emitting diode, available in 8 pin (dual channel) and
16 pin (quad channel) package.
The elements are mounted on one leadframe provid-
ing a fixed distance between input and output for high-
est safety requirements.
Creepage current resistance according to VDE 0303/
IEC 60112 Comparative Tracking Index:
CTI ≥ 175
Thickness through insulation ≥ 0.75 mm
Order Information
TCET2100
TCET4100
TCET2100 / TCET4100
17198
Part
A
C
1
C
E
8 PIN
CTR 50 - 600 %, Dual Channel, DIP-8
CTR 50 - 600 %, Quad Channel, DIP-16
Vishay Semiconductors
16 PIN
D E
V
Remarks
e3
www.vishay.com
Pb
Pb-free
1

Related parts for TCET4100

TCET4100 Summary of contents

Page 1

... PIN 17198 Description The TCET2100/ TCET4100 consists of a phototrans- istor optically coupled to a gallium arsenide infrared- emitting diode, available in 8 pin (dual channel) and 16 pin (quad channel) package. The elements are mounted on one leadframe provid- ing a fixed distance between input and output for high- est safety requirements ...

Page 2

... TCET2100 / TCET4100 Vishay Semiconductors Absolute Maximum Ratings °C, unless otherwise specified amb Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability ...

Page 3

... Routine test Partial discharge test voltage - Lot test (sample test) (see figure 2) Insulation resistance V = 500 500 500 (construction test only) Document Number 83727 Rev. 1.4, 26-Oct-04 TCET2100 / TCET4100 Test condition Symbol = CEsat = 10 mA Test condition Symbol = 5 mA CTR F Test condition Symbol ...

Page 4

... TCET2100 / TCET4100 Vishay Semiconductors 300 Phototransistor 250 Psi ( mW ) 200 150 100 IR-Diode 50 Isi ( 100 125 – Safety Temperature ( ° 9182 si Figure 1. Derating diagram Switching Characteristics Parameter Delay time (see figure 3) Rise time (see figure 3) Turn-on time (see figure 3) Storage time (see figure 3) ...

Page 5

... V - Forward Voltage ( 11862 F Figure 7. Forward Current vs. Forward Voltage Document Number 83727 Rev. 1.4, 26-Oct-04 TCET2100 / TCET4100 96 11698 t t storage time fall time turn-off time 2.0 1.5 1.0 0.5 0 –25 ...

Page 6

... TCET2100 / TCET4100 Vishay Semiconductors 100 V = 0.1 0.01 0 – Forward Current ( 11027 F Figure 10. Collector Current vs. Forward Current 100 20mA I =50mA F 10mA 10 5mA 2mA 1 1mA 0.1 0 – Collector Emitter Voltage ( 10985 CE Figure 11. Collector Current vs. Collector Emitter Voltage 2.4 High Efficiency Red 2.0 1.6 1 ...

Page 7

... Package Dimensions in mm Package Dimensions in mm Document Number 83727 Rev. 1.4, 26-Oct-04 TCET2100 / TCET4100 Vishay Semiconductors 14784 14783 www.vishay.com 7 ...

Page 8

... TCET2100 / TCET4100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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