ILD223T Vishay, ILD223T Datasheet - Page 2
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ILD223T
Manufacturer Part Number
ILD223T
Description
OPTOCOUPLER PHOTODARL 500% 8SOIC
Manufacturer
Vishay
Specifications of ILD223T
Mounting Type
Surface Mount
Isolation Voltage
4000 Vrms
Number Of Channels
2
Input Type
DC
Voltage - Isolation
4000Vrms
Current Transfer Ratio (min)
500% @ 1mA
Voltage - Output
30V
Vce Saturation (max)
1V
Output Type
Darlington
Package / Case
8-SOIC (3.9mm Width)
Forward Current
30 mA
Maximum Input Diode Current
30 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Darlington
Configuration
2
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1000 mV
Maximum Forward Diode Voltage
1.3 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
No. Of Channels
2
Optocoupler Output Type
Photodarlington
Input Current
10mA
Output Voltage
30V
Opto Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current - Dc Forward (if)
-
Current Transfer Ratio (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
751-1314-2
ILD223TGITR
ILD223TGITR
ILD223TGITR
ILD223TGITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ILD223T
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
ILD223T
Manufacturer:
VISHAY/威世
Quantity:
20 000
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
448
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter reverse voltage
Collector current
Power dissipation
Derate lineary from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation resistance
Package power dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: optocoupler.answers@vishay.com
Output (Dual, Quad Channel)
Optocoupler, Phototransistor
V
V
V
I
V
CE
C
V
CE
CE
V
TEST CONDITION
IO
2 mm from case bottom
(1)
R
= 1 mA, I
IO
= 0.4 V, I
= 5.0 V, f = 1 MHz
= 10 V, I
= 0 V, f = 1 MHz
TEST CONDITION
= 500 V, T
V
= 500 V, T
I
F
VCE
V
= 60 mA
R
t < 1.0 ms
= 6 V
= 10 V
B
B
B
= 20 µA
= 20 µA
= 20 µA
amb
amb
= 100 °C
= 25 °C
SYMBOL
V
h
T
I
C
CESAT
h
C
CEO
FEsat
V
I
thJL
FE
R
CE
F
O
PART
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
MIN.
200
120
SYMBOL
V
V
V
V
V
V
T
P
P
V
I
R
R
P
T
T
V
FSM
CER
CER
CER
CER
CER
CER
I
I
I
amb
T
diss
diss
ISO
stg
sld
F
C
C
tot
IO
IO
R
j
TYP.
1.25
0.01
0.25
750
650
400
6.8
25
5
- 40 to + 150
- 40 to + 100
VALUE
5300
Document Number: 83646
100
400
200
10
10
250
100
260
2.5
1.3
2.6
≥ 7
≥ 7
3.3
50
50
70
70
70
70
50
60
6
12
11
MAX.
1800
1.65
600
0.4
10
50
Rev. 1.6, 10-Dec-08
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mm
mm
mA
mA
mA
UNIT
°C
°C
°C
°C
RMS
K/W
Ω
Ω
V
A
V
V
V
V
V
V
µA
pF
pF
nA
V
V