TCET1102 Vishay, TCET1102 Datasheet - Page 5
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TCET1102
Manufacturer Part Number
TCET1102
Description
OPTOCOUPLER PHOTOTRANS 125% 4DIP
Manufacturer
Vishay
Datasheet
1.TCET1101.pdf
(9 pages)
Specifications of TCET1102
Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
22% @ 1mA
Current Transfer Ratio (max)
125% @ 10mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Output Type
Transistor
Package / Case
4-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TCET1102
Manufacturer:
VISHAY
Quantity:
1 400
Company:
Part Number:
TCET1102
Manufacturer:
JRC
Quantity:
1 401
Company:
Part Number:
TCET1102G
Manufacturer:
ROHM
Quantity:
7 840
Part Number:
TCET1102G
Manufacturer:
VISHAY/威世
Quantity:
20 000
TCET1100, TCET1100G
Vishay Semiconductors
www.vishay.com
814
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
95 10804
94 9182
0
R
t
T
p
t
Fig. 3 - Test Circuit, Non-Saturated Operation
G
p
= 50 µs
= 0.01
= 50 Ω
300
250
200
150
100
50
0
I
F
0
Fig. 1 - Derating Diagram
50 Ω
I
T
F
25
si
- Safety Temperature (°C)
IR-diode
I
si
50
100 Ω
(mA)
P
Phototransistor
si
75
V
V
V
V
V
V
V
V
S
S
S
S
S
S
S
S
(mW)
For technical questions, contact:
+ 5 V
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
I
Channel II
C
Channel I
100
= 2 mA; adjusted through
TEST CONDITION
Optocoupler, Phototransistor Output,
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 4)
(see figure 4)
C
C
C
C
C
C
F
F
125
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 10 mA, R
= 10 mA, R
input amplitude
Oscilloscope
R
C
150
L
L
= 1 MΩ
= 20 pF
High Temperature
L
L
L
L
L
L
L
L
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 1 kΩ,
= 1 kΩ,
optocoupleranswers@vishay.com
SYMBOL
t
t
t
t
t
t
t
on
t
off
on
off
d
s
Fig. 2 - Test Pulse Diagram for Sample Test According to
r
f
95 10843
0
R
t
T
p
13930
t
V
G
p
V
V
IOWM
= 0.01
= 50 µs
IOTM
IORM
= 50 Ω
V
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
Pd
0
Fig. 4 - Test Circuit, Saturated Operation
I
F
t
1
50 Ω
I
MIN.
F
= 10 mA
t
t
t
1
3
stres
t
, t
, t
test
1 kΩ
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
0.3
4.7
10
3
3
6
5
9
+ 5 V
I
Channel II
C
Channel I
Document Number: 83503
MAX.
Rev. 2.3, 14-Oct-09
t
2
t
3
R
C
t
Oscilloscope
t
test
stres
L
L
≥
≤
t
t
4
1 MΩ
20 pF
UNIT
µs
µs
µs
µs
µs
µs
µs
µs