TCET1105 Vishay, TCET1105 Datasheet - Page 5

• Manufacturer Part Number: TCET1105
• Description: OPTOCOUPLER PHOTOTRANS 150% 4DIP
• Manufacturer: Vishay

Specifications of TCET1105

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Current Transfer Ratio: 150 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TCET1105GI; TCET1105GI; TCET1105VS

TCET1100, TCET1100G
Vishay Semiconductors
www.vishay.com
814
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
95 10804
94 9182
0
R
t
T
p
t
Fig. 3 - Test Circuit, Non-Saturated Operation
G
p
= 50 µs
= 0.01
= 50 Ω
300
250
200
150
100
50
0
I
F
0
Fig. 1 - Derating Diagram
50 Ω
I
T
F
25
si
- Safety Temperature (°C)
IR-diode
I
si
50
100 Ω
(mA)
P
Phototransistor
si
75
V
V
V
V
V
V
V
V
S
S
S
S
S
S
S
S
(mW)
For technical questions, contact:
+ 5 V
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
I
Channel II
C
Channel I
100
= 2 mA; adjusted through
TEST CONDITION
Optocoupler, Phototransistor Output,
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 4)
(see figure 4)
C
C
C
C
C
C
F
F
125
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 10 mA, R
= 10 mA, R
input amplitude
Oscilloscope
R
C
150
L
L
= 1 MΩ
= 20 pF
High Temperature
L
L
L
L
L
L
L
L
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 1 kΩ,
= 1 kΩ,
[e-mail]
SYMBOL
t
t
t
t
t
t
t
on
t
off
on
off
d
s
Fig. 2 - Test Pulse Diagram for Sample Test According to
r
f
95 10843
0
R
t
T
p
13930
t
V
G
p
V
V
IOWM
= 0.01
= 50 µs
IOTM
IORM
= 50 Ω
V
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
Pd
0
Fig. 4 - Test Circuit, Saturated Operation
I
F
t
1
50 Ω
I
MIN.
F
= 10 mA
t
t
t
1
3
stres
t
, t
, t
test
1 kΩ
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
0.3
4.7
10
3
3
6
5
9
+ 5 V
I
Channel II
C
Channel I
Document Number: 83503
MAX.
Rev. 2.3, 14-Oct-09
t
2
t
3
R
C
t
Oscilloscope
t
test
stres
L
L
≥
≤
t
t
4
1 MΩ
20 pF
UNIT
µs
µs
µs
µs
µs
µs
µs
µs