CNY17-1X007 Vishay, CNY17-1X007 Datasheet - Page 2

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CNY17-1X007

Manufacturer Part Number
CNY17-1X007
Description
OPTOCOUPLER PHOTOTRANSISTOR
Manufacturer
Vishay
Datasheet

Specifications of CNY17-1X007

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
40% @ 10mA
Current Transfer Ratio (max)
80% @ 10mA
Voltage - Output
70V
Current - Output / Channel
100mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP (0.300", 7.62mm)
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Configuration
1 Channel
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
80 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
(1)
(2)
Note
(1)
Document Number: 81863
Rev. 1.3, 26-Oct-09
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
between emitter and detector referred to climate
DIN 50014, part 2, Nov. 74
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices.
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
amb
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact:
V
Optocoupler, Phototransistor Output,
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CB
EB
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
I
F
R
V
CE
= 60 mA
= 10 mA
R
(1)
max. 10 s, dip soldering: distance to
(1)
= 10 V
= 6 V
with Base Connection
C
V
V
= 2.5 mA
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
t = 1 s
CNY17-1
CNY17-2
CNY17-3
CNY17-4
optocoupleranswers@vishay.com
amb
PART
amb
= 100 °C
= 25 °C
SYMBOL
V
I
I
I
I
V
C
C
C
CEsat
C
R
R
C
CEO
CEO
CEO
CEO
V
I
BR
R
CE
CB
EB
th
th
F
O
C
SYMBOL
T
V
MIN.
T
T
R
R
amb
ISO
stg
sld
6
IO
IO
Vishay Semiconductors
TYP.
1.25
0.01
0.25
750
500
- 55 to + 125
- 55 to + 100
5.2
6.5
7.5
0.6
25
2
2
5
5
VALUE
≥ 10
≥ 10
5000
≥ 0.4
175
260
≥ 7
≥ 7
12
11
MAX.
1.65
100
100
0.4
10
50
50
www.vishay.com
CNY17.
UNIT
V
mm
mm
mm
°C
°C
°C
RMS
Ω
Ω
UNIT
K/W
K/W
µA
nA
nA
nA
nA
pF
pF
pF
pF
pF
V
V
V
2

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