TLP281(GB-TP,F,T) Toshiba, TLP281(GB-TP,F,T) Datasheet - Page 3
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TLP281(GB-TP,F,T)
Manufacturer Part Number
TLP281(GB-TP,F,T)
Description
PHOTOCOUPLER TRANS OUT 4-SOP
Manufacturer
Toshiba
Specifications of TLP281(GB-TP,F,T)
Number Of Channels
1
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
100% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SOP
Configuration
1 Channel
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Current Transfer Ratio
100 % to 600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Forward Current
10 mA
Maximum Input Diode Current
10 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Collector-emitter Voltage
80V
Package Type
SOP
Collector Current (dc) (max)
50mA
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP281(GB-TP,F)
TLP281GBFTR
TLP281GBFTR
Absolute Maximum Ratings
Individual Electrical Characteristics
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
(Note 2) Because of the construction,leak current might be increased by ambient light.
Forward Current
Forward Current Derating
Pulse Forward Current
Reverse Voltage
Junction Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature
Forward Voltage
Reverse Current
Capacitance
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance
(Collector to Emitter)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
CHARACTERISTIC
together.
Please use photocoupler with less ambient light.
CHARACTERISTIC
(Note1)
(Note2)
(Ta = 25℃)
SYMBOL
∆P
∆P
∆I
V
V
T
BV
T
T
F
I
V
P
CEO
ECO
P
C
V
V
I
T
I
FP
T
T
opr
stg
SYMBOL
sol
C
F
R
C
T
/°C
(BR) CEO
(BR) ECO
j
j
/°C
/°C
S
I
C
CEO
V
C
I
CE
R
F
T
(Ta = 25℃)
−0.7 (Ta≥53°C)
I
V
V = 0, f = 1 MHz
I
I
V
Ambient Light Below
V
Ambient Light Below
V = 0, f = 1 MHz
F
C
E
TLP281
(100 ℓx)
(100 ℓx)
2500(AC,1min,R.H.≤60%)
R
CE
CE
= 10 mA
−1.5
−2.0
= 0.1 mA
= 0.5 mA
150
200
= 5 V
3
= 48 V,
= 48 V, Ta = 85°C
TEST CONDITION
260 (10s)
−55~100
−55~125
RATING
125
125
50
80
50
1
5
7
−0.5 (Ta≥25°C)
TLP281−4
−1.0
−1.7
100
170
mW /°C
mW /°C
mA /°C
UNIT
Vrms
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
V
MIN.
1.0
80
—
—
—
—
—
TLP281,TLP281-4
7
TYP.
1.15
0.01
(2)
(4)
30
10
—
—
—
2
2007-10-01
MAX.
(10)
(50)
1.3
0.1
10
50
—
—
—
—
UNIT
μA
μA
μA
pF
pF
V
V
V