TLP281(GB,F,T) Toshiba, TLP281(GB,F,T) Datasheet - Page 24
![PHOTOCOUPLER TRANS OUT 4-SOP](/photos/7/72/77200/4-sop_tight_sml.jpg)
TLP281(GB,F,T)
Manufacturer Part Number
TLP281(GB,F,T)
Description
PHOTOCOUPLER TRANS OUT 4-SOP
Manufacturer
Toshiba
Specifications of TLP281(GB,F,T)
Number Of Channels
1
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
100% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SOP
Configuration
1 Channel
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Current Transfer Ratio
100 % to 600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Forward Current
10 mA
Maximum Input Diode Current
10 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP281(GB,F)
TLP281(GB,F)
TLP281(GB,F)
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
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Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC