TLP621-4(F) Toshiba, TLP621-4(F) Datasheet

PHOTOCPLR QUAD TRANS OUT 16-DIP

TLP621-4(F)

Manufacturer Part Number
TLP621-4(F)
Description
PHOTOCPLR QUAD TRANS OUT 16-DIP
Manufacturer
Toshiba
Datasheets

Specifications of TLP621-4(F)

Number Of Channels
4
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
55V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Configuration
4
Maximum Collector Emitter Voltage
55 V
Maximum Collector Emitter Saturation Voltage
200 mV (Typ)
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
No. Of Channels
4
Optocoupler Output Type
Phototransistor
Input Current
16mA
Output Voltage
55V
Opto Case Style
DIP
No. Of Pins
16
Approval Bodies
UL
Rohs Compliant
Yes
Number Of Elements
4
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
55V
Package Type
PDIP
Collector Current (dc) (max)
50mA
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.2V
Pin Count
16
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP621-4F
Programmable Controller
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP621−2 offers two isolated channels in an eight lead plastic DIP,
which the TLP621−4 provides four isolated channels in a sixteen plastic
DIP.
Pin Configurations
2
1
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
1: Anode
2: Cathode
3: Emitter
4: Collector
TLP621
TLP621,TLP621−2,TLP621−4
Rank GB: 100% (min.)
4
3
2
4
1
3
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
(top view)
1, 3: Anode
2, 4: Cathode
5, 7: Emitter
6, 8: Collector
TLP621-2
8
7
6
5
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
6
4
5
7
8
2
1
3
TLP621-4
1
15
14
12
16
13
10
11
9
TLP621,TLP621−2,TLP621−4
Weight: 0.26 g (typ.)
Weight: 0.54 g (typ.)
Weight: 1.1 g (typ.)
TOSHIBA
TOSHIBA
TOSHIBA
11−10C4
11−20A3
11−5B2
2007-10-01
Unit in mm

Related parts for TLP621-4(F)

TLP621-4(F) Summary of contents

Page 1

... The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP, which the TLP621−4 provides four isolated channels in a sixteen plastic DIP. • ...

Page 2

... TLP621 Rank GR Rank BL Rank GB (None) TLP621−2 TLP621−4 Rank GB *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621−2 (GB): TLP621−2 Made In Japan UL recognized E67349 BSI approved 6508, 7445 ...

Page 3

... When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)” 7.62 mm pich standard type • Creepage distance : 6.4 mm (min.) Clearance : 6.4 mm (min.) Insulation thickness : 0.4 mm (min.) TLP621,TLP621−2,TLP621− 10.16 mm pich (LF2) type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 3 2007-10-01 ...

Page 4

... T BV 5000 (AC, 1min., R.H.≤ 60%) S Symbol Min. Typ. V ― ― ― −25 T ― opr 4 Unit TLP621−2 TLP621− −0.5 (Ta = 25°C) mA /° −0.7 mW /°C V ° 100 mW −1.0 mW /°C °C °C °C °C 150 mW −1.5 mW /°C V rms Max. ...

Page 5

... (sat 0.2 mA (Ta = 25°C) Symbol Test Condition MHz 500 AC, 1 minute BV AC, 1 second, in oil S DC, 1 minute, in oil 5 TLP621,TLP621−2,TLP621−4 Min. Typ. Max. 1.0 1.15 1.3 — — 10 — 30 — 55 — — 7 — — — 10 100 — — 10 — MIn. Typ. ...

Page 6

... Fig. 1 Switching time test circuit I F (Ta = 25°C) Symbol Test Condition 100Ω off 1.9 kΩ (Fig. OFF TLP621,TLP621−2,TLP621−4 Min. Typ. Max. — 2 — — 3 — — 3 — — 3 — — 2 — — 15 — — 25 — 4.5V 0. OFF 2007-10-01 Unit μs μs ...

Page 7

... Pulse width ≤ 100μ 25°C 1000 500 300 100 Duty cycle ratio DR TLP621,TLP621−2,TLP621−4 TLP621-2 TLP621-4 100 100 120 -20 0 Ambient temperature Ta (°C) TLP621-2 TLP621-4 120 100 100 120 -20 0 Ambient temperature Ta (°C) TLP621-2 TLP621-4 3000 1000 500 300 100 – ...

Page 8

... Pulse forward voltage – 25°C 60 50mA 30mA 20mA 40 15mA P C (MAX.) 10mA 5mA Collector-emitter voltage V CE TLP621,TLP621−2,TLP621−4 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.4 1.6 0 2.0 2.4 (V) Ambient temperature 0.2 0 (V) Collector-emitter voltage V 8 Δ ...

Page 9

... F I – 100 25mA 50 30 10mA 5mA 1mA 1 0 0.5mA 0.3 0.1 - Ambient temperature T (°C) a TLP621,TLP621−2,TLP621−4 500 300 Sample A 100 Sample 0.3 1 Forward current I 100 0. 5mA 1mA 0.16 0.12 0.08 0.04 0 -20 Ambient temperature T 1000 Ta = 25° 16mA 500 ...

Page 10

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. TLP621,TLP621−2,TLP621−4 10 2007-10-01 ...

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