TSAL6100 Vishay, TSAL6100 Datasheet - Page 2
TSAL6100
Manufacturer Part Number
TSAL6100
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Specifications of TSAL6100
Rise Time
800 ns
Radiant Intensity
130 mW/sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
80mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 10
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1203
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TSAL6100
Manufacturer:
RENESAS
Quantity:
101
Part Number:
TSAL6100
Manufacturer:
VISHAY/威世
Quantity:
20 000
TSAL6100
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21211
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 230 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
Method: 63 % encircled energy
High Power Infrared Emitting Diode,
V
I
I
I
R
F
F
F
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
I
F
V
F
940 nm, GaAlAs/GaAs
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 20 mA
R
= 1 mA
= 5 V
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
emittertechsupport@vishay.com
SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
d
t
t
R
e
e
r
e
p
f
F
F
VF
j
e
p
21212
120
100
80
60
40
20
0
0
MIN.
650
80
10
T
amb
R
20 30 40
thJA
- Ambient Temperature (°C)
= 230 K/W
TYP.
1000
1.35
- 1.8
- 0.6
± 10
130
940
800
800
2.6
0.2
3.7
25
35
50
50 60 70 80
Document Number: 81009
MAX.
400
1.6
10
3
Rev. 1.6, 29-Jun-09
90 100
mW/sr
mW/sr
mV/K
UNIT
nm/K
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V