TSAL4400 Vishay, TSAL4400 Datasheet - Page 2

• Manufacturer Part Number: TSAL4400
• Description: EMITTER IR 3MM HI EFF 950NM
• Manufacturer: Vishay

Specifications of TSAL4400

• Radiant Intensity: 240 mW or sr
• Viewing Angle: 50°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 16mW/sr @ 100mA
• Wavelength: 940nm
• Voltage - Forward (vf) Typ: 1.35V
• Orientation: Top View
• Mounting Type: Through Hole
• Package / Case: Radial, 3mm Dia (T 1)
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 210 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lens Shape: Circular
• Peak Wavelength: 940nm
• Forward Current If(av): 100mA
• Rise Time: 800ns
• Fall Time Tf: 800ns
• Supply Voltage Range: 1.35V To 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1201

Note
T
Document Number: 81006
Rev. 1.6, 16-Sep-08
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21317
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 300 K/W
- Ambient Temperature (°C)
e
p
F
High Power Infrared Emitting Diode, RoHS
For technical questions, contact: [e-mail]
Compliant, 940 nm, GaAlAs/GaAs
Method: 63 % encircled energy
V
I
I
I
R
F
F
F
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
I
F
V
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 20 mA
R
= 1 mA
= 5 V
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
SYMBOL
TK
TKλ
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
V
V
Δλ
φ
λ
I
C
I
I
ϕ
t
t
d
R
e
e
e
p
r
f
F
F
VF
j
e
p
21318
120
100
80
60
40
20
0
0
MIN.
135
10
16
R
thJA
T
amb
20 30 40
= 300 K/W
- Ambient Temperature (°C)
Vishay Semiconductors
TYP.
1.35
- 1.8
- 0.6
± 25
240
940
800
800
2.6
0.2
1.9
25
30
35
50
50 60 70 80
MAX.
TSAL4400
1.6
10
80
3
90 100
www.vishay.com
mW/sr
mW/sr
UNIT
mV/K
nm/K
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V
87