TSAL6400 Vishay, TSAL6400 Datasheet - Page 2

EMITTER IR 5MM HI EFF 950NM

TSAL6400

Manufacturer Part Number
TSAL6400
Description
EMITTER IR 5MM HI EFF 950NM
Manufacturer
Vishay
Datasheet

Specifications of TSAL6400

Rise Time
800 ns
Radiant Intensity
40 mW/sr
Viewing Angle
50°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
25mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 25
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1205

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSAL6400
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
TSAL6400
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TSAL6400
Quantity:
40 000
Company:
Part Number:
TSAL6400
Quantity:
2 625
TSAL6400
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21211
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 230 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
Method: 63 % encircled energy
High Power Infrared Emitting Diode,
V
I
I
I
R
F
F
F
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
I
F
V
F
940 nm, GaAlAs/GaAs
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 20 mA
R
= 1 mA
= 5 V
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
emittertechsupport@vishay.com
SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
d
t
t
R
e
e
r
e
p
f
F
F
VF
j
e
p
21212
120
100
80
60
40
20
0
0
MIN.
220
10
25
T
amb
R
20 30 40
thJA
- Ambient Temperature (°C)
= 230 K/W
TYP.
1.35
- 1.8
- 0.6
± 25
310
940
800
800
2.6
0.2
2.2
25
40
35
50
50 60 70 80
Document Number: 81011
MAX.
125
1.6
10
3
Rev. 1.8, 29-Jun-09
90 100
mW/sr
mW/sr
mV/K
UNIT
nm/K
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V

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