TSAL7600 Vishay, TSAL7600 Datasheet

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... High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plas- tic packages. In comparison with the standard GaAs on GaAs tech- nology these emitters achieve more than 100 % radi- ant power improvement at a similar wavelength. ...

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... TSAL7600 Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage I = 100 mA Temp. coefficient 100 Reverse current Junction capacitance MHz Optical Characteristics °C, unless otherwise specified amb Parameter Radiant intensity I = 100 mA 1 Radiant power I = 100 mA Temp. coefficient of φ Angle of half intensity ...

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... Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81015 Rev. 1.6, 28-Nov-06 1000 100 0 14255 Figure 6. Radiant Intensity vs. Forward Current 1000 100 0 13602 Figure 7. Radiant Power vs. Forward Current 1.6 1.2 0.8 0.4 80 100 94 7993 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature TSAL7600 Vishay Semiconductors Forward Current (mA ...

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... TSAL7600 Vishay Semiconductors 1.25 1.0 0.75 0.5 0. 100 890 940 λ 14291 - Wavelength (nm) Figure 9. Relative Radiant Power vs. Wavelength Package Dimensions in mm 20327 www.vishay.com 4 1.0 0.9 0.8 0.7 990 0.6 0.4 94 8011 Figure 10. Relative Radiant Intensity vs. Angular Displacement 0° 10° 20° 30° ...

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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81015 Rev. 1.6, 28-Nov-06 and may do so without further notice. TSAL7600 Vishay Semiconductors www.vishay.com 5 ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...