TSAL5300 Vishay, TSAL5300 Datasheet

EMITTER IR 5MM HI EFF 940NM

TSAL5300

Manufacturer Part Number
TSAL5300
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Datasheet

Specifications of TSAL5300

Radiant Intensity
350 mW or sr
Viewing Angle
44°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
30mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lens Shape
Circular
Peak Wavelength
940nm
Forward Current If(av)
100mA
Rise Time
800ns
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1202

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSAL5300
Manufacturer:
PULSE
Quantity:
31 500
Company:
Part Number:
TSAL5300
Quantity:
70 000
Company:
Part Number:
TSAL5300
Quantity:
70 000
DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
Note
T
Document Number: 81008
Rev. 2.0, 29-Jun-09
amb
PRODUCT SUMMARY
COMPONENT
TSAL5300
ORDERING INFORMATION
ORDERING CODE
TSAL5300
TSAL5300-MSZ
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
I
e
For technical questions, contact:
(mW/sr)
Tape and ammopack
45
J-STD-051, leads 7 mm soldered
High Power Infrared Emitting Diode,
PACKAGING
96 11505
t ≤ 5 s, 2 mm from case
t
p
TEST CONDITION
/T = 0.5, t
Bulk
t
p
940 nm, GaAlAs/GaAs
on PCB
= 100 µs
p
= 100 µs
ϕ (deg)
MOQ: 5000 pcs, 1000 pcs/ammopack
± 22
emittertechsupport@vishay.com
MOQ: 4000 pcs, 4000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λ
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
accordance to WEEE 2002/96/EC
REMARKS
SYMBOL
R
T
I
T
T
I
FSM
V
P
amb
I
FM
T
thJA
stg
F
sd
R
V
j
λ
P
940
(nm)
p
Vishay Semiconductors
= 940 nm
- 40 to + 100
- 40 to + 85
VALUE
100
200
160
100
260
230
1.5
5
PACKAGE FORM
TSAL5300
T-1¾
T-1¾
t
r
www.vishay.com
800
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

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TSAL5300 Summary of contents

Page 1

... DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSAL5300 45 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSAL5300 TSAL5300-MSZ Tape and ammopack Note ...

Page 2

... TSAL5300 Vishay Semiconductors 180 160 140 120 100 R = 230 K/W 80 thJA 100 T - Ambient Temperature (°C) 21211 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...

Page 3

... For technical questions, contact: Rev. 2.0, 29-Jun-09 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 13602 7993 Fig Relative Radiant Intensity/Power vs. Ambient Temperature 14291 Fig Relative Radiant Power vs. Wavelength emittertechsupport@vishay.com TSAL5300 Vishay Semiconductors 1000 100 Forward Current (mA) F Fig Radiant Power vs. Forward Current 1 ...

Page 4

... TSAL5300 Vishay Semiconductors 0° 10° 1.0 0.9 0.8 0.7 0.6 0 0.4 0.2 94 8883 Fig Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5258.05-4 Issue: 8; 19.05.09 96 12122 www.vishay.com For technical questions, contact: 4 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 20° ...

Page 5

... TAPE DIMENSIONS TSAL5300 OPTION CS21Z FSZ GSZ MSZ 2.54 19314 AMMOPACK The tape is folded in a concertina arrangement and laid in cardboard box. If components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked “-”. If components are required with anode before cathode, then tape should be taken from the side of the box marked “ ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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