CQY37N Vishay, CQY37N Datasheet

DIODE IR EMITTER GAAS 1.8MM

CQY37N

Manufacturer Part Number
CQY37N
Description
DIODE IR EMITTER GAAS 1.8MM
Manufacturer
Vishay
Datasheets

Specifications of CQY37N

Radiant Intensity
5 mW/sr
Viewing Angle
24°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
2.2mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.3V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 1.8mm (T-3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Lens Shape
Circular
Peak Wavelength
950nm
Forward Current If(av)
50mA
Rise Time
800ns
Supply Voltage Range
1.3V
Operating Temperature Range
-25°C To +85°C
Diode Case Style
T-3/4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1027

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CQY37N
Manufacturer:
VISHAY/威世
Quantity:
20 000
GaAs Infrared Emitting Diode in Miniature (T-¾) Package
Description
CQY37N is a standard GaAs infrared emitting diode
in a miniature top view plastic package.
Its clear lens provides a high radiant intensity without
external optics.
The diode is case compatible to the BPW17N pho-
totransistor, allowing the user to assemble his own
optical interrupters.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81002
Rev. 1.4, 08-Mar-05
• Suitable for pulse operation
• Standard T-¾ lensed miniature package
• Angle of half intensity ϕ = ± 12 °
• Peak wavelength λ
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Forward current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
Forward Voltage
Breakdown Voltage
Junction capacitance
amb
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
p
= 950 nm
t
t ≤ 3 s
I
I
V
p
F
R
R
≤ 100 µs
= 50 mA, t
= 100 µA
= 0 V, f = 1 MHz, E = 0
Test condition
Test condition
p
≤ 20 ms
Applications
Radiation source in near infrared range
Symbol
V
V
(BR)
C
F
j
Symbol
R
I
T
FSM
T
V
P
thJA
I
T
stg
sd
F
R
V
j
Min
5
- 25 to + 100
Vishay Semiconductors
Value
Typ.
100
170
100
245
450
1.3
50
5
2
94 8638
Max
CQY37N
1.6
www.vishay.com
K/W
Unit
mW
mA
°C
°C
°C
V
A
Unit
pF
V
V
1

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CQY37N Summary of contents

Page 1

... GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N pho- totransistor, allowing the user to assemble his own optical interrupters ...

Page 2

... CQY37N Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Radiant Intensity mA Radiant Power mA Temp. Coefficient of φ Angle of Half Intensity = 50 mA Peak Wavelength I F Spectral Bandwidth Rise time Fall Time Virtual Source Diameter Typical Characteristics (Tamb = 25 °C unless otherwise specified) ...

Page 3

... Figure 8. Relative Radiant Power vs. Wavelength 1.0 0.9 0.8 0.7 0.6 1000 94 7922 Figure 9. Relative Radiant Intensity vs. Angular Displacement 140 CQY37N Vishay Semiconductors I = 100 mA F 1000 950 λ - Wavelength ( nm ) 0° ° ° 30° 40° 50° 60° ...

Page 4

... CQY37N Vishay Semiconductors Package Dimensions in mm 5.9 5.5 4.1 0.47 0.40 5.4 5.0 www.vishay.com 4 96 12262 3.45 3. 13.9 5.3 12.5 4 Pb-free technical drawings according to DIN specifications C E 2.54 Document Number 81002 Rev. 1.4, 08-Mar-05 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81002 Rev. 1.4, 08-Mar-05 and may do so without further notice. CQY37N Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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