TSHG8400 Vishay, TSHG8400 Datasheet
TSHG8400
Specifications of TSHG8400
Related parts for TSHG8400
TSHG8400 Summary of contents
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... High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero DESCRIPTION TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHG8400 70 Note Test conditions see table “Basic Characteristics” ...
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... TSHG8400 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... Fig Relative Radiant Power vs. Wavelength 1000 94 8883 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHG8400 Vishay Semiconductors 1000 100 100 1000 I Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.25 1.0 ...
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... TSHG8400 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A 0.5 + 0.15 - 0.05 Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero C + 0.2 0.6 - 0.1 2.54 nom. emittertechsupport@vishay.com R 2.49 (sphere) Area not plane Ø 5 ± 0.15 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...