SIM-20ST Rohm Semiconductor, SIM-20ST Datasheet

EMITTER IR 950NM SIDE VIEW TH

SIM-20ST

Manufacturer Part Number
SIM-20ST
Description
EMITTER IR 950NM SIDE VIEW TH
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SIM-20ST

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
7.5mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.3V
Viewing Angle
30°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Beam Angle
15 deg
Maximum Power Dissipation
80 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Forward Current
50 mA
Forward Voltage
1.3 V
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1361
SIM-20ST
SIM-20STF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIM-20ST
Quantity:
2 000
Part Number:
SIM-20STLM
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Sensors
Infrared light emitting diode, side-view type
SIM-012SB
The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens.
Light source for sensors
1) Compact package (4.4x4.3 mm) with lens.
2) High efficiency, high output P
3) Emission spectrum well suited to silicon detectors
4) Good current-optical output linearity.
5) Long life, high reliability.
Features
Electrical and optical characteristics (Ta=25°C)
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Applications
Absolute maximum ratings (Ta=25°C)
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width = 0.1 ms, duty ratio 1%
P
= 950 nm).
Parameter
Parameter
O
= 7mW (I
Symbol
tr・tf
F
θ
∆λ
V
λ
I
I
fc
Symbol
= 50 mA).
1/2
R
E
P
F
Topr
Tstg
V
P
I
I
FP
F
R
D
Min.
−25 to +85
−30 to +100
±15
Typ.
950
7.5
1.3
1.0
1.0
40
Limits
0.5
50
80
5
Dimensions (Unit : mm)
Resin coating
Max.
1.6
10
mW/sr
MHz
Unit
deg
nm
nm
µA
µs
V
Unit
mW
mA
°C
°C
4.3±0.1
3.9±0.1
V
A
(2.54)
2.0
I
I
V
I
I
I
I
I
0.45
F
F
F
F
F
F
F
0.5
=50mA
=50mA
R
=50mA
=50mA
=50mA
=50mA
=50mA
=3V
1 Cathode
Conditions
Notes:
1. Tolerances are ±0.2 unless
2. Value in parenthese is size
otherwise indicated.
at base of leads.
Rev.A
SIM-20ST
0.4
0.4
2 Anode
0.53
1/2

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SIM-20ST Summary of contents

Page 1

... Sensors Infrared light emitting diode, side-view type SIM-012SB The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens. Applications Light source for sensors Features 1) Compact package (4.4x4.3 mm) with lens. 2) High efficiency, high output P = 7mW ( Emission spectrum well suited to silicon detectors (λ ...

Page 2

... Fig.2 Forward current vs. forward voltage 100 900 920 940 960 980 OPTICAL WAVELENGTH : λ ( nm) Fig.5 Wavelength 0° 100 10° 20° 30° 40° 50° 60° 70° 80° 90° θ ( deg) ANGULAR DISPLACEMENT : SIM-20ST (mA) FORWARD CURRENT : I F Fig.3 Emitting strength vs. forward current 1000 Rev.A 50 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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