SE2460-003 Honeywell Sensing and Control, SE2460-003 Datasheet

DIODE IR EMITTING GAAS PILL PACK

SE2460-003

Manufacturer Part Number
SE2460-003
Description
DIODE IR EMITTING GAAS PILL PACK
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SE2460-003

Viewing Angle
18°
Current - Dc Forward (if)
75mA
Radiant Intensity (ie) Min @ If
1mW/sr @ 100mA
Wavelength
935nm
Voltage - Forward (vf) Typ
1.6V
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
Mini-pill
Peak Wavelength
935nm
Forward Current If(av)
75mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.6V
Operating Temperature Range
-55°C To +125°C
Diode Case Style
Metal Can
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-1979
FEATURES
DESCRIPTION
The SE2460 is a gallium arsenide infrared emitting
diode mounted in a hermetically sealed, glass lensed,
metal can package. This package directly mounts in
double sided PC boards.
SE2460
GaAs Infrared Emitting Diode
Miniature, hermetically sealed, pill style, metal
can package
18¡ (nominal) beam angle
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for direct mounting to printed circuit boards
935 nm wavelength
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
16
DIM_002.ds4
INFRA--1.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
2 plc decimals
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
±0.005(0.12)
±0.020(0.51)

Related parts for SE2460-003

SE2460-003 Summary of contents

Page 1

... Ideal for direct mounting to printed circuit boards 935 nm wavelength Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington DESCRIPTION The SE2460 is a gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. 16 INFRA--1.TIF ...

Page 2

... SE2460 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡ ...

Page 3

... SE2460 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1 ...

Page 4

... SE2460 GaAs Infrared Emitting Diode Fig. 7 Normalized Power Output vs Temperature 2.0 1.8 1.6 1 -50 -25 0 +25 +50 +75 +100 +125 T - Ambient temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...

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