LN66F Panasonic - SSG, LN66F Datasheet
LN66F
Manufacturer Part Number
LN66F
Description
IR LED 950NM 15 DEG T1-3/4
Manufacturer
Panasonic - SSG
Datasheet
1.LN66F.pdf
(3 pages)
Specifications of LN66F
Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
13mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.35V
Viewing Angle
30°
Mounting Type
Radial Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package / Case
-
Orientation
-
Other names
LN66F
P14233
P14233
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LN66F
Manufacturer:
PANASONI
Quantity:
40 000
Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
For light source of remote control systems
*
*
f = 100 Hz, Duty cycle = 0.1 %
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between pins
Half-power angle
High-power output, high-efficiency : I
Emitted light spectrum suited for silicon photodetectors
Narrow directivity :
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Parameter
= 15 deg. (typ.)
Symbol
Symbol
V
I
T
T
V
V
P
FP
I
C
I
I
opr
FP
stg
R
F
D
e
P
R
F
t
*
*
e
= 13.0 mW/sr (min.)
– 40 to +100
–25 to +85
I
I
I
I
I
V
V
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
FP
R
R
= 50mA
= 50mA
= 50mA
= 50mA
1.5
= 1.0A
75
50
= 3V
= 0V, f = 1MHz
3
Conditions
Unit
mW
mA
˚C
˚C
A
V
min
13
1.35
950
typ
50
20
15
ø5.0 0.2
2
1
2.54
2-1.0 0.15
2-0.6 0.15
max
1.50
3.0
10
Unit : mm
mW/sr
1: Cathode
2: Anode
Unit
deg.
nm
nm
pF
V
V
A
1
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LN66F Summary of contents
Page 1
... Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems Features High-power output, high-efficiency : I Emitted light spectrum suited for silicon photodetectors Narrow directivity : = 15 deg. (typ.) Transparent epoxy resin package Absolute Maximum Ratings (Ta = 25˚C) Parameter ...
Page 2
... Duty cycle (%) V — 1 50mA F 1.2 10mA 0.8 0 – Ambient temperature Ta (˚C ) Spectral characteristics 100 I = 50mA 25˚ 860 900 940 980 1020 1060 1100 Wavelength (nm) LN66F I — 25˚ 0.4 0.8 1.2 Forward voltage V ( — 50mA F 1 –1 10 120 – Ambient temperature Ta (˚C ) Directivity characteristics 0˚ ...
Page 3
... LN66F Frequency characteristics 25˚C 1 –1 10 –2 10 – Frequency f (kHz) 4 Infrared Light Emitting Diodes 3 ...