SE5470-004 Honeywell Sensing and Control, SE5470-004 Datasheet - Page 2
![DIODE IR EMITTING ALGAAS TO-46](/photos/8/0/80003/se3470-003_se5470-003_se5470-004_se5455-003_sml.jpg)
SE5470-004
Manufacturer Part Number
SE5470-004
Description
DIODE IR EMITTING ALGAAS TO-46
Manufacturer
Honeywell Sensing and Control
Specifications of SE5470-004
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
3.5mW/sr @ 100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.9V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46-2, Metal Can
Peak Wavelength
880nm
Forward Current If(av)
100mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.9V
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
480-1984
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Peak Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
Notes
1.43 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3470/5470
AlGaAs Infrared Emitting Diode
1. Derate linearly from 25¡C free-air temperature at the rate of
(1µs pulse width, 300 pps)
PARAMETER
SYMBOL
100 mA
3 A
150 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
MIN
TYP
MAX
UNITS
SCHEMATIC
TEST CONDITIONS
33